Vishay Dual N Channel Mosfet TrenchFET 2 Type N-Channel MOSFET, 13.1 A, 100 V Enhancement, 8-Pin PowerPAK 1212
- RS stock no.:
- 228-2826
- Mfr. Part No.:
- Si7252ADP-T1-GE3
- Manufacturer:
- Vishay
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Bulk discount available
Subtotal (1 reel of 3000 units)*
R 40 575,00
(exc. VAT)
R 46 662,00
(inc. VAT)
FREE delivery for orders over R 1,500.00
Temporarily out of stock
- 15,000 left, ready to ship from another location
Need more? Click ‘Check delivery dates’ to find extra stock and lead times.
Units | Per unit | Per Reel* |
|---|---|---|
| 3000 - 3000 | R 13.525 | R 40,575.00 |
| 6000 + | R 13.187 | R 39,561.00 |
*price indicative
- RS stock no.:
- 228-2826
- Mfr. Part No.:
- Si7252ADP-T1-GE3
- Manufacturer:
- Vishay
Specification
Technical data sheets
Legislation and Compliance
Product Details
Find similar products by selecting one or more attributes.
Select all | Attribute | Value |
|---|---|---|
| Brand | Vishay | |
| Channel Type | Type N | |
| Product Type | MOSFET | |
| Maximum Continuous Drain Current Id | 13.1A | |
| Maximum Drain Source Voltage Vds | 100V | |
| Series | TrenchFET | |
| Package Type | PowerPAK 1212 | |
| Mount Type | Surface | |
| Pin Count | 8 | |
| Maximum Drain Source Resistance Rds | 18.6mΩ | |
| Channel Mode | Enhancement | |
| Forward Voltage Vf | 100V | |
| Minimum Operating Temperature | -55°C | |
| Maximum Gate Source Voltage Vgs | 20 V | |
| Typical Gate Charge Qg @ Vgs | 13.1nC | |
| Transistor Configuration | Dual N Channel Mosfet | |
| Maximum Operating Temperature | 150°C | |
| Standards/Approvals | No | |
| Number of Elements per Chip | 2 | |
| Automotive Standard | No | |
| Select all | ||
|---|---|---|
Brand Vishay | ||
Channel Type Type N | ||
Product Type MOSFET | ||
Maximum Continuous Drain Current Id 13.1A | ||
Maximum Drain Source Voltage Vds 100V | ||
Series TrenchFET | ||
Package Type PowerPAK 1212 | ||
Mount Type Surface | ||
Pin Count 8 | ||
Maximum Drain Source Resistance Rds 18.6mΩ | ||
Channel Mode Enhancement | ||
Forward Voltage Vf 100V | ||
Minimum Operating Temperature -55°C | ||
Maximum Gate Source Voltage Vgs 20 V | ||
Typical Gate Charge Qg @ Vgs 13.1nC | ||
Transistor Configuration Dual N Channel Mosfet | ||
Maximum Operating Temperature 150°C | ||
Standards/Approvals No | ||
Number of Elements per Chip 2 | ||
Automotive Standard No | ||
The Vishay TrenchFET N-Channel power MOSFET is use for DC/DC primary side switch, Telecom / server, Motor drive control and Synchronous rectification.
PWM optimized
100 % Rg and UIS tested
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