Toshiba Type N-Channel MOSFET, 8 A, 60 V Enhancement, 3-Pin TO-252

Image representative of range

View all MOSFETs
Bulk discount available

Subtotal (1 reel of 2000 units)*

R 22 174,00

(exc. VAT)

R 25 500,00

(inc. VAT)

Add to Basket
Select or type quantity
Temporarily out of stock
  • Shipping from 29 September 2026
Need more? Click ‘Check delivery dates’ to find extra stock and lead times.
Units
Per unit
Per Reel*
2000 - 2000R 11.087R 22,174.00
4000 - 8000R 10.809R 21,618.00
10000 +R 10.485R 20,970.00

*price indicative

RS stock no.:
171-2429
Mfr. Part No.:
TK8S06K3L
Manufacturer:
Toshiba
Find similar products by selecting one or more attributes.
Select all

Brand

Toshiba

Product Type

MOSFET

Channel Type

Type N

Maximum Continuous Drain Current Id

8A

Maximum Drain Source Voltage Vds

60V

Package Type

TO-252

Mount Type

Surface

Pin Count

3

Maximum Drain Source Resistance Rds

80mΩ

Channel Mode

Enhancement

Minimum Operating Temperature

-55°C

Maximum Gate Source Voltage Vgs

20 V

Typical Gate Charge Qg @ Vgs

10nC

Maximum Power Dissipation Pd

25W

Forward Voltage Vf

-1.2V

Maximum Operating Temperature

175°C

Height

2.3mm

Length

6.5mm

Width

7 mm

Standards/Approvals

No

Automotive Standard

AEC-Q101

Exempt

COO (Country of Origin):
JP
Automotive

Motor Drivers

DC-DC Converters

Switching Voltage Regulators

Low drain-source on-resistance: RDS(ON) = 43 mΩ (typ.) (VGS = 10 V)

Low leakage current: IDSS = 10 μA (max) (VDS = 60 V)

Enhancement mode: Vth = 2.0 to 3.0 V (VDS = 10 V, ID = 1 mA

Related links