Toshiba Type N-Channel MOSFET, 100 A, 40 V Enhancement, 3-Pin TO-252

Image representative of range

View all MOSFETs
Bulk discount available

Subtotal (1 reel of 2000 units)*

R 42 842,00

(exc. VAT)

R 49 268,00

(inc. VAT)

Add to Basket
Select or type quantity
Temporarily out of stock
  • 2,000 left, ready to ship from another location
Need more? Click ‘Check delivery dates’ to find extra stock and lead times.
Units
Per unit
Per Reel*
2000 - 2000R 21.421R 42,842.00
4000 - 4000R 20.886R 41,772.00
6000 +R 20.259R 40,518.00

*price indicative

RS stock no.:
171-2416
Mfr. Part No.:
TK100S04N1L
Manufacturer:
Toshiba
Find similar products by selecting one or more attributes.
Select all

Brand

Toshiba

Channel Type

Type N

Product Type

MOSFET

Maximum Continuous Drain Current Id

100A

Maximum Drain Source Voltage Vds

40V

Package Type

TO-252

Mount Type

Surface

Pin Count

3

Maximum Drain Source Resistance Rds

4.5mΩ

Channel Mode

Enhancement

Forward Voltage Vf

-1.2V

Minimum Operating Temperature

-55°C

Typical Gate Charge Qg @ Vgs

76nC

Maximum Power Dissipation Pd

180W

Maximum Gate Source Voltage Vgs

20 V

Maximum Operating Temperature

175°C

Length

6.5mm

Height

2.3mm

Width

7 mm

Standards/Approvals

No

Automotive Standard

AEC-Q101

Exempt

COO (Country of Origin):
JP
Applications

Automotive

Switching Voltage Regulators

Motor Drivers

Features

Low drain-source on-resistance: RDS(ON) = 1.9 mΩ (typ.) (VGS = 10 V)

Low leakage current: IDSS = 10 μA (max) (VDS = 40 V)

Enhancement mode: Vth = 1.5 to 2.5 V (VDS = 10 V, ID = 0.5 mA)

Related links