Toshiba Type P-Channel MOSFET, 8 A, 60 V Enhancement, 3-Pin TO-252 TJ8S06M3L

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Subtotal (1 pack of 10 units)*

R 188,92

(exc. VAT)

R 217,26

(inc. VAT)

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Limited stock
  • Plus 140 left, shipping from 05 January 2026
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Units
Per unit
Per Pack*
10 - 40R 18.892R 188.92
50 - 90R 18.42R 184.20
100 +R 17.867R 178.67

*price indicative

Packaging Options:
RS stock no.:
171-2492
Mfr. Part No.:
TJ8S06M3L
Manufacturer:
Toshiba
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Brand

Toshiba

Channel Type

Type P

Product Type

MOSFET

Maximum Continuous Drain Current Id

8A

Maximum Drain Source Voltage Vds

60V

Package Type

TO-252

Mount Type

Surface

Pin Count

3

Maximum Drain Source Resistance Rds

130mΩ

Channel Mode

Enhancement

Typical Gate Charge Qg @ Vgs

19nC

Maximum Gate Source Voltage Vgs

10 V

Maximum Power Dissipation Pd

27W

Minimum Operating Temperature

-55°C

Forward Voltage Vf

1.2V

Maximum Operating Temperature

175°C

Standards/Approvals

No

Height

2.3mm

Width

7 mm

Length

6.5mm

Automotive Standard

AEC-Q101

Not Applicable

COO (Country of Origin):
JP
Applications

Automotive

Motor Drivers

DC-DC Converters

Switching Voltage Regulators

Features

Low drain-source on-resistance: RDS(ON) = 80 mΩ (typ.) (VGS = -10 V)

Low leakage current: IDSS = -10 μA (max) (VDS = -60V)

Enhancement mode: Vth = -2.0 to -3.0 V (VDS = -10 V, ID = -1 mA)

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