Toshiba Type N-Channel MOSFET, 10 μA, 250 V Enhancement, 3-Pin TO-252 TK8P25DA,RQ(S

Image representative of range

Bulk discount available

Subtotal (1 pack of 25 units)*

R 239,575

(exc. VAT)

R 275,50

(inc. VAT)

Add to Basket
Select or type quantity
Stock information currently inaccessible - Please check back later

Units
Per unit
Per Pack*
25 - 100R 9.583R 239.58
125 - 225R 9.344R 233.60
250 - 1225R 9.063R 226.58
1250 - 2475R 8.701R 217.53
2500 +R 8.353R 208.83

*price indicative

RS stock no.:
174-4116
Mfr. Part No.:
TK8P25DA,RQ(S
Manufacturer:
Toshiba
Find similar products by selecting one or more attributes.
Select all

Brand

Toshiba

Product Type

MOSFET

Channel Type

Type N

Maximum Continuous Drain Current Id

10μA

Maximum Drain Source Voltage Vds

250V

Package Type

TO-252

Mount Type

Surface

Pin Count

3

Maximum Drain Source Resistance Rds

500mΩ

Channel Mode

Enhancement

Forward Voltage Vf

-1.7V

Typical Gate Charge Qg @ Vgs

16nC

Maximum Power Dissipation Pd

55W

Minimum Operating Temperature

-55°C

Maximum Operating Temperature

150°C

Standards/Approvals

No

Length

6.6mm

Height

2.3mm

Automotive Standard

No

COO (Country of Origin):
CN
The Toshiba MOSFET is silicon N-channel MOS with 3 pin and surface mounting type.

Low drain-source on-resistance

Low leakage current

Related links