Toshiba Type N-Channel MOSFET, 60 A, 60 V Enhancement, 3-Pin TO-252

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Subtotal (1 reel of 2000 units)*

R 35 572,00

(exc. VAT)

R 40 908,00

(inc. VAT)

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Units
Per unit
Per Reel*
2000 - 2000R 17.786R 35,572.00
4000 - 8000R 17.341R 34,682.00
10000 +R 16.821R 33,642.00

*price indicative

RS stock no.:
171-2426
Mfr. Part No.:
TK60S06K3L
Manufacturer:
Toshiba
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Brand

Toshiba

Product Type

MOSFET

Channel Type

Type N

Maximum Continuous Drain Current Id

60A

Maximum Drain Source Voltage Vds

60V

Package Type

TO-252

Mount Type

Surface

Pin Count

3

Maximum Drain Source Resistance Rds

12.3mΩ

Channel Mode

Enhancement

Maximum Gate Source Voltage Vgs

20 V

Forward Voltage Vf

-1.2V

Maximum Power Dissipation Pd

88W

Typical Gate Charge Qg @ Vgs

60nC

Minimum Operating Temperature

-55°C

Maximum Operating Temperature

175°C

Length

6.5mm

Standards/Approvals

No

Height

2.3mm

Width

7 mm

Automotive Standard

AEC-Q101

Exempt

COO (Country of Origin):
JP
Automotive

Motor Drivers

DC-DC Converters

Switching Voltage Regulators

Low drain-source on-resistance: RDS(ON) = 6.4 mΩ (typ.) (VGS = 10 V)

Low leakage current: IDSS = 10 μA (max) (VDS = 60 V)

Enhancement mode: Vth = 2.0 to 3.0 V (VDS = 10 V, ID = 1 mA)

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