Toshiba Type N-Channel MOSFET, 60 A, 60 V Enhancement, 3-Pin TO-252 TK60S06K3L

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Subtotal (1 pack of 5 units)*

R 109,71

(exc. VAT)

R 126,165

(inc. VAT)

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Temporarily out of stock
  • 3,730 unit(s) shipping from 08 June 2026
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Units
Per unit
Per Pack*
5 - 5R 21.942R 109.71
10 - 20R 21.394R 106.97
25 - 45R 20.752R 103.76
50 - 120R 19.922R 99.61
125 +R 19.126R 95.63

*price indicative

Packaging Options:
RS stock no.:
171-2481
Mfr. Part No.:
TK60S06K3L
Manufacturer:
Toshiba
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Brand

Toshiba

Product Type

MOSFET

Channel Type

Type N

Maximum Continuous Drain Current Id

60A

Maximum Drain Source Voltage Vds

60V

Package Type

TO-252

Mount Type

Surface

Pin Count

3

Maximum Drain Source Resistance Rds

12.3mΩ

Channel Mode

Enhancement

Maximum Power Dissipation Pd

88W

Typical Gate Charge Qg @ Vgs

60nC

Forward Voltage Vf

-1.2V

Minimum Operating Temperature

-55°C

Maximum Operating Temperature

175°C

Standards/Approvals

No

Length

6.5mm

Height

2.3mm

Automotive Standard

AEC-Q101

Exempt

COO (Country of Origin):
JP
Automotive

Motor Drivers

DC-DC Converters

Switching Voltage Regulators

Low drain-source on-resistance: RDS(ON) = 6.4 mΩ (typ.) (VGS = 10 V)

Low leakage current: IDSS = 10 μA (max) (VDS = 60 V)

Enhancement mode: Vth = 2.0 to 3.0 V (VDS = 10 V, ID = 1 mA)

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