Toshiba Type N-Channel MOSFET, 65 A, 40 V Enhancement, 3-Pin TO-252 TK65S04N1L

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Subtotal (1 pack of 10 units)*

R 197,57

(exc. VAT)

R 227,21

(inc. VAT)

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  • 2,120 unit(s) ready to ship from another location
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Units
Per unit
Per Pack*
10 - 90R 19.757R 197.57
100 - 190R 19.263R 192.63
200 - 1990R 18.685R 186.85
2000 +R 17.938R 179.38

*price indicative

Packaging Options:
RS stock no.:
171-2494
Mfr. Part No.:
TK65S04N1L
Manufacturer:
Toshiba
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Brand

Toshiba

Product Type

MOSFET

Channel Type

Type N

Maximum Continuous Drain Current Id

65A

Maximum Drain Source Voltage Vds

40V

Package Type

TO-252

Mount Type

Surface

Pin Count

3

Maximum Drain Source Resistance Rds

4.3mΩ

Channel Mode

Enhancement

Minimum Operating Temperature

-55°C

Typical Gate Charge Qg @ Vgs

39nC

Maximum Power Dissipation Pd

107W

Forward Voltage Vf

-1.2V

Maximum Operating Temperature

175°C

Length

6.5mm

Height

2.3mm

Standards/Approvals

No

Automotive Standard

AEC-Q101

Exempt

COO (Country of Origin):
JP
Applications

Automotive

Motor Drivers

Switching Voltage Regulators

Features

Low drain-source on-resistance: RDS(ON) = 3.3 mΩ (typ

Low leakage current: IDSS = 10 μA (max) (VDS = 40 V)

Enhancement mode: Vth = 1.5 to 2.5 V (VDS = 10 V, ID = 0.3 mA)

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