MPN

Toshiba Type N-Channel MOSFET, 100 A, 40 V Enhancement, 8-Pin TSON TPN2R304PL

RS stock no.:: 171-2390
Mfr. Part No.:: TPN2R304PL
Manufacturer:: Toshiba

Toshiba Type N-Channel MOSFET, 100 A, 40 V Enhancement, 8-Pin TSON TPN2R304PL

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Bulk discount available

Subtotal (1 pack of 10 units)*

R 145,68

(exc. VAT)

R 167,53

(inc. VAT)

FREE delivery for orders over R 1,500.00

Temporarily out of stock

14,890 unit(s) shipping from 05 January 2026

Need more? Click ‘Check delivery dates’ to find extra stock and lead times.

Units	Per unit	Per Pack*
10 - 40	R 14.568	R 145.68
50 - 90	R 14.204	R 142.04
100 - 990	R 13.778	R 137.78
1000 - 2990	R 13.227	R 132.27
3000 +	R 12.698	R 126.98

*price indicative

RS stock no.:: 171-2390
Mfr. Part No.:: TPN2R304PL
Manufacturer:: Toshiba

Specification

Technical data sheets

Legislation and Compliance

Product Details

Find similar products by selecting one or more attributes.

Select all	Attribute	Value
	Brand	Toshiba
	Product Type	MOSFET
	Channel Type	Type N
	Maximum Continuous Drain Current Id	100A
	Maximum Drain Source Voltage Vds	40V
	Package Type	TSON
	Mount Type	Surface
	Pin Count	8
	Maximum Drain Source Resistance Rds	4mΩ
	Channel Mode	Enhancement
	Minimum Operating Temperature	-55°C
	Maximum Gate Source Voltage Vgs	20 V
	Maximum Power Dissipation Pd	104W
	Typical Gate Charge Qg @ Vgs	41nC
	Forward Voltage Vf	-1.2V
	Maximum Operating Temperature	175°C
	Height	0.85mm
	Length	3.1mm
	Width	3.1 mm
	Standards/Approvals	No
	Automotive Standard	No

	Select all
	Brand Toshiba
	Product Type MOSFET
	Channel Type Type N
	Maximum Continuous Drain Current Id 100A
	Maximum Drain Source Voltage Vds 40V
	Package Type TSON
	Mount Type Surface
	Pin Count 8
	Maximum Drain Source Resistance Rds 4mΩ
	Channel Mode Enhancement
	Minimum Operating Temperature -55°C
	Maximum Gate Source Voltage Vgs 20 V
	Maximum Power Dissipation Pd 104W
	Typical Gate Charge Qg @ Vgs 41nC
	Forward Voltage Vf -1.2V
	Maximum Operating Temperature 175°C
	Height 0.85mm
	Length 3.1mm
	Width 3.1 mm
	Standards/Approvals No
	Automotive Standard No

Datasheet

Exempt

High-Efficiency DC-DC Converters

Switching Voltage Regulators

Motor Drivers

High-speed switching

Small gate charge: QSW = 10.8 nC (typ.)

Small output charge: Qoss = 27 nC (typ.)

Low drain-source on-resistance: RDS(ON) = 1.8 mΩ (typ.) (VGS = 10 V)

Low leakage current: IDSS = 10 μA (max) (VDS = 40 V)

Enhancement mode: Vth = 1.4 to 2.4 V (VDS = 10 V, ID = 0.3 mA)

Toshiba Type N-Channel MOSFET, 100 A, 40 V Enhancement, 8-Pin TSON TPN2R304PL

FREE delivery for orders over R 1,500.00

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