MPN

Toshiba Type N-Channel MOSFET, 65 A, 60 V Enhancement, 8-Pin TSON TPN14006NH,L1Q(M

RS stock no.:: 171-2385
Mfr. Part No.:: TPN14006NH,L1Q(M
Manufacturer:: Toshiba

Toshiba Type N-Channel MOSFET, 65 A, 60 V Enhancement, 8-Pin TSON TPN14006NH,L1Q(M

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Bulk discount available

Subtotal (1 pack of 10 units)*

R 96,83

(exc. VAT)

R 111,35

(inc. VAT)

FREE delivery for orders over R 1,500.00

In Stock

Plus 1,790 unit(s) shipping from 29 December 2025

Need more? Click ‘Check delivery dates’ to find extra stock and lead times.

Units	Per unit	Per Pack*
10 - 40	R 9.683	R 96.83
50 - 90	R 9.441	R 94.41
100 - 240	R 9.158	R 91.58
250 - 490	R 8.792	R 87.92
500 +	R 8.44	R 84.40

*price indicative

RS stock no.:: 171-2385
Mfr. Part No.:: TPN14006NH,L1Q(M
Manufacturer:: Toshiba

Specification

Technical data sheets

Legislation and Compliance

Product Details

Find similar products by selecting one or more attributes.

Select all	Attribute	Value
	Brand	Toshiba
	Product Type	MOSFET
	Channel Type	Type N
	Maximum Continuous Drain Current Id	65A
	Maximum Drain Source Voltage Vds	60V
	Package Type	TSON
	Mount Type	Surface
	Pin Count	8
	Maximum Drain Source Resistance Rds	41mΩ
	Channel Mode	Enhancement
	Maximum Gate Source Voltage Vgs	20 V
	Maximum Power Dissipation Pd	30W
	Forward Voltage Vf	-1.2V
	Minimum Operating Temperature	-55°C
	Typical Gate Charge Qg @ Vgs	15nC
	Maximum Operating Temperature	150°C
	Length	3.1mm
	Height	0.85mm
	Standards/Approvals	No
	Width	3.1 mm
	Automotive Standard	No

	Select all
	Brand Toshiba
	Product Type MOSFET
	Channel Type Type N
	Maximum Continuous Drain Current Id 65A
	Maximum Drain Source Voltage Vds 60V
	Package Type TSON
	Mount Type Surface
	Pin Count 8
	Maximum Drain Source Resistance Rds 41mΩ
	Channel Mode Enhancement
	Maximum Gate Source Voltage Vgs 20 V
	Maximum Power Dissipation Pd 30W
	Forward Voltage Vf -1.2V
	Minimum Operating Temperature -55°C
	Typical Gate Charge Qg @ Vgs 15nC
	Maximum Operating Temperature 150°C
	Length 3.1mm
	Height 0.85mm
	Standards/Approvals No
	Width 3.1 mm
	Automotive Standard No

Datasheet

Exempt

Switching Voltage Regulators

Motor Drivers

DC-DC Converters

High-speed switching

Small gate charge: QSW = 5.5 nC (typ.)

Low drain-source on-resistance: RDS(ON) = 11 mΩ (typ.)

Low leakage current: IDSS = 10 μA (max) (VDS = 60 V)

Enhancement mode: Vth = 2.0 to 4.0 V (VDS = 10 V, ID = 0.2 mA)

Toshiba Type N-Channel MOSFET, 65 A, 60 V Enhancement, 8-Pin TSON TPN14006NH,L1Q(M

FREE delivery for orders over R 1,500.00

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