MPN

Toshiba Type N-Channel MOSFET, 100 A, 40 V Enhancement, 8-Pin TSON

RS stock no.:: 171-2208
Mfr. Part No.:: TPN2R304PL
Manufacturer:: Toshiba

Toshiba Type N-Channel MOSFET, 100 A, 40 V Enhancement, 8-Pin TSON

Image representative of range

Subtotal (1 reel of 5000 units)*

R 57 560,00

(exc. VAT)

R 66 195,00

(inc. VAT)

FREE delivery for orders over R 1,500.00

In Stock

10,000 unit(s) ready to ship from another location

Need more? Click ‘Check delivery dates’ to find extra stock and lead times.

Units	Per unit	Per Reel*
5000 +	R 11.512	R 57,560.00

*price indicative

RS stock no.:: 171-2208
Mfr. Part No.:: TPN2R304PL
Manufacturer:: Toshiba

Specification

Technical data sheets

Legislation and Compliance

Product Details

Find similar products by selecting one or more attributes.

Select all	Attribute	Value
	Brand	Toshiba
	Product Type	MOSFET
	Channel Type	Type N
	Maximum Continuous Drain Current Id	100A
	Maximum Drain Source Voltage Vds	40V
	Package Type	TSON
	Mount Type	Surface
	Pin Count	8
	Maximum Drain Source Resistance Rds	4mΩ
	Channel Mode	Enhancement
	Maximum Gate Source Voltage Vgs	20 V
	Typical Gate Charge Qg @ Vgs	41nC
	Minimum Operating Temperature	-55°C
	Forward Voltage Vf	-1.2V
	Maximum Power Dissipation Pd	104W
	Maximum Operating Temperature	175°C
	Width	3.1 mm
	Length	3.1mm
	Standards/Approvals	No
	Height	0.85mm
	Automotive Standard	No

	Select all
	Brand Toshiba
	Product Type MOSFET
	Channel Type Type N
	Maximum Continuous Drain Current Id 100A
	Maximum Drain Source Voltage Vds 40V
	Package Type TSON
	Mount Type Surface
	Pin Count 8
	Maximum Drain Source Resistance Rds 4mΩ
	Channel Mode Enhancement
	Maximum Gate Source Voltage Vgs 20 V
	Typical Gate Charge Qg @ Vgs 41nC
	Minimum Operating Temperature -55°C
	Forward Voltage Vf -1.2V
	Maximum Power Dissipation Pd 104W
	Maximum Operating Temperature 175°C
	Width 3.1 mm
	Length 3.1mm
	Standards/Approvals No
	Height 0.85mm
	Automotive Standard No

Exempt

High-Efficiency DC-DC Converters

Switching Voltage Regulators

Motor Drivers

High-speed switching

Small gate charge: QSW = 10.8 nC (typ.)

Small output charge: Qoss = 27 nC (typ.)

Low drain-source on-resistance: RDS(ON) = 1.8 mΩ (typ.) (VGS = 10 V)

Low leakage current: IDSS = 10 μA (max) (VDS = 40 V)

Enhancement mode: Vth = 1.4 to 2.4 V (VDS = 10 V, ID = 0.3 mA)

Toshiba Type N-Channel MOSFET, 100 A, 40 V Enhancement, 8-Pin TSON

FREE delivery for orders over R 1,500.00

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