N-Channel MOSFET, 22 A, 80 V, 8-Pin TSON Toshiba TPN30008NH,LQ(S
- RS stock no.:
- 133-2814
- Mfr. Part No.:
- TPN30008NH,LQ(S
- Manufacturer:
- Toshiba
40 Available from UK/Europe in 4–6 working days for collection or delivery to major cities (Heavy, hazardous or lithium product excluded. Delivery T&C's apply)
Not Available for premium delivery
Price (Excl VAT) Each (In a Pack of 20)
R 2,84
(exc. VAT)
R 3,27
(inc. VAT)
Units | Per unit | Per Pack* |
|---|---|---|
| 20 - 80 | R 2,84 | R 56,80 |
| 100 - 180 | R 2,769 | R 55,38 |
| 200 - 980 | R 2,686 | R 53,72 |
| 1000 - 1980 | R 2,578 | R 51,56 |
| 2000 + | R 2,475 | R 49,50 |
*price indicative
- RS stock no.:
- 133-2814
- Mfr. Part No.:
- TPN30008NH,LQ(S
- Manufacturer:
- Toshiba
Technical data sheets
Legislation and Compliance
Product Details
MOSFET Transistors, Toshiba
Specification
Attribute | Value |
|---|---|
| Channel Type | N |
| Maximum Continuous Drain Current | 22 A |
| Maximum Drain Source Voltage | 80 V |
| Series | U-MOSVIII-H |
| Package Type | TSON |
| Mounting Type | Surface Mount |
| Pin Count | 8 |
| Maximum Drain Source Resistance | 30 mΩ |
| Channel Mode | Enhancement |
| Maximum Gate Threshold Voltage | 4V |
| Minimum Gate Threshold Voltage | 2V |
| Maximum Power Dissipation | 27 W |
| Transistor Configuration | Single |
| Maximum Gate Source Voltage | -20 V, +20 V |
| Transistor Material | Si |
| Length | 3.1mm |
| Typical Gate Charge @ Vgs | 11 nC @ 10 V |
| Number of Elements per Chip | 1 |
| Width | 3.1mm |
| Maximum Operating Temperature | +150 °C |
| Forward Diode Voltage | 1.2V |
| Height | 0.85mm |