MPN

Toshiba N-Channel MOSFET, 92 A, 40 V Enhancement, 8-Pin TSON TPN3R704PL

Name: Toshiba N-Channel MOSFET, 92 A, 40 V Enhancement, 8-Pin TSON TPN3R704PL
Brand: Toshiba
SKU: 171-2363
Availability: BackOrder

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Subtotal (1 pack of 5 units)*

R 117,37

(exc. VAT)

R 134,975

(inc. VAT)

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*price indicative

Specification

Technical data sheets

Legislation and Compliance

Product Details

Find similar products by selecting one or more attributes.

Select all	Attribute	Value
	Brand	Toshiba
	Channel Type	N
	Product Type	MOSFET
	Maximum Continuous Drain Current Id	92A
	Maximum Drain Source Voltage Vds	40V
	Package Type	TSON
	Mount Type	Surface
	Pin Count	8
	Maximum Drain Source Resistance Rds	6mΩ
	Channel Mode	Enhancement
	Minimum Operating Temperature	-55°C
	Forward Voltage Vf	-1.2V
	Maximum Power Dissipation Pd	86W
	Typical Gate Charge Qg @ Vgs	27nC
	Maximum Gate Source Voltage Vgs	20V
	Maximum Operating Temperature	175°C
	Height	0.85mm
	Length	3.1mm
	Width	3.1mm
	Standards/Approvals	No
	Automotive Standard	No

	Select all
	Brand Toshiba
	Channel Type N
	Product Type MOSFET
	Maximum Continuous Drain Current Id 92A
	Maximum Drain Source Voltage Vds 40V
	Package Type TSON
	Mount Type Surface
	Pin Count 8
	Maximum Drain Source Resistance Rds 6mΩ
	Channel Mode Enhancement
	Minimum Operating Temperature -55°C
	Forward Voltage Vf -1.2V
	Maximum Power Dissipation Pd 86W
	Typical Gate Charge Qg @ Vgs 27nC
	Maximum Gate Source Voltage Vgs 20V
	Maximum Operating Temperature 175°C
	Height 0.85mm
	Length 3.1mm
	Width 3.1mm
	Standards/Approvals No
	Automotive Standard No

Not Applicable

High-Efficiency DC-DC Converters

Switching Voltage Regulators

Motor Drivers

High-speed switching

Small gate charge: QSW = 8.1 nC (typ.)

Small output charge: Qoss = 20.2 nC (typ.)

Low drain-source on-resistance: RDS(ON) = 3.0 mΩ (typ.) (VGS = 10 V)

Low leakage current: IDSS = 10 μA (max) (VDS = 40 V)

Enhancement mode: V = 1.4 to 2.4 V (V = 10 V, I = 0.2 mA)

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