Infineon BSC12DN20NS3 G Type N-Channel MOSFET, 11.3 A, 200 V Enhancement, 8-Pin TDSON

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Bulk discount available

Subtotal (1 reel of 5000 units)*

R 65 500,00

(exc. VAT)

R 75 300,00

(inc. VAT)

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Units
Per unit
Per Reel*
5000 - 5000R 13.10R 65,500.00
10000 +R 12.772R 63,860.00

*price indicative

RS stock no.:
170-2290
Mfr. Part No.:
BSC12DN20NS3GATMA1
Manufacturer:
Infineon
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Brand

Infineon

Product Type

MOSFET

Channel Type

Type N

Maximum Continuous Drain Current Id

11.3A

Maximum Drain Source Voltage Vds

200V

Package Type

TDSON

Series

BSC12DN20NS3 G

Mount Type

Surface

Pin Count

8

Maximum Drain Source Resistance Rds

125mΩ

Channel Mode

Enhancement

Minimum Operating Temperature

-55°C

Maximum Gate Source Voltage Vgs

20 V

Maximum Power Dissipation Pd

50W

Forward Voltage Vf

1V

Typical Gate Charge Qg @ Vgs

6.5nC

Maximum Operating Temperature

150°C

Length

5.35mm

Standards/Approvals

No

Width

6.35 mm

Height

1.1mm

Automotive Standard

No

The Infineon BSC12DN20NS3 G 200V OptiMOS products are performance leading Benchmark technologies, perfectly suited for synchronous rectification in 48V systems, DC-DC converters, uninterruptable power supplies (UPS) and inverters for DC motor drives.

Highest efficiency

Highest power density

Lowest board space consumption

Minimal device paralleling required

System cost improvement

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