N-Channel MOSFET, 24 A, 200 V, 8-Pin TDSON Infineon BSC500N20NS3GATMA1
- RS stock no.:
- 170-2351
- Mfr. Part No.:
- BSC500N20NS3GATMA1
- Manufacturer:
- Infineon
Bulk discount available
Subtotal (1 pack of 10 units)**
R 131 56
(exc. VAT)
R 151 29
(inc. VAT)
8550 Available from UK/Europe in 4–6 working days for collection or delivery to major cities (Heavy, hazardous or lithium product excluded. Delivery T&C's apply)*
* Delivery dates may change based on your chosen quantity and delivery address.
FREE delivery for orders over R 1500
Not Available for premium delivery
Units | Per unit | Per Pack** |
---|---|---|
10 - 90 | R 13,156 | R 131,56 |
100 - 490 | R 12,827 | R 128,27 |
500 - 990 | R 12,442 | R 124,42 |
1000 - 2490 | R 11,944 | R 119,44 |
2500 + | R 11,466 | R 114,66 |
**price indicative
- RS stock no.:
- 170-2351
- Mfr. Part No.:
- BSC500N20NS3GATMA1
- Manufacturer:
- Infineon
Find similar products by selecting one or more attributes.
Select all | Attribute | Value |
---|---|---|
Manufacturer | Infineon | |
Channel Type | N | |
Maximum Continuous Drain Current | 24 A | |
Maximum Drain Source Voltage | 200 V | |
Series | OptiMOS™ 3 | |
Package Type | TDSON | |
Mounting Type | Surface Mount | |
Pin Count | 8 | |
Maximum Drain Source Resistance | 50 mΩ | |
Channel Mode | Enhancement | |
Maximum Gate Threshold Voltage | 4V | |
Minimum Gate Threshold Voltage | 2V | |
Maximum Power Dissipation | 96 W | |
Transistor Configuration | Single | |
Maximum Gate Source Voltage | 20 V | |
Maximum Operating Temperature | +150 °C | |
Number of Elements per Chip | 1 | |
Width | 6.35mm | |
Length | 5.35mm | |
Typical Gate Charge @ Vgs | 15 nC @ 10 V | |
Height | 1.1mm | |
Forward Diode Voltage | 1.2V | |
Minimum Operating Temperature | -55 °C | |
Select all | ||
---|---|---|
Manufacturer Infineon | ||
Channel Type N | ||
Maximum Continuous Drain Current 24 A | ||
Maximum Drain Source Voltage 200 V | ||
Series OptiMOS™ 3 | ||
Package Type TDSON | ||
Mounting Type Surface Mount | ||
Pin Count 8 | ||
Maximum Drain Source Resistance 50 mΩ | ||
Channel Mode Enhancement | ||
Maximum Gate Threshold Voltage 4V | ||
Minimum Gate Threshold Voltage 2V | ||
Maximum Power Dissipation 96 W | ||
Transistor Configuration Single | ||
Maximum Gate Source Voltage 20 V | ||
Maximum Operating Temperature +150 °C | ||
Number of Elements per Chip 1 | ||
Width 6.35mm | ||
Length 5.35mm | ||
Typical Gate Charge @ Vgs 15 nC @ 10 V | ||
Height 1.1mm | ||
Forward Diode Voltage 1.2V | ||
Minimum Operating Temperature -55 °C | ||
Related links
- N-Channel MOSFET 200 V, 8-Pin TDSON Infineon BSC500N20NS3GATMA1
- N-Channel MOSFET 200 V, 8-Pin TDSON Infineon BSC900N20NS3GATMA1
- N-Channel MOSFET 200 V, 8-Pin TDSON Infineon BSC320N20NS3GATMA1
- N-Channel MOSFET 200 V, 8-Pin TDSON Infineon BSC12DN20NS3GATMA1
- N-Channel MOSFET 200 V, 8-Pin TDSON Infineon BSC350N20NSFDATMA1
- N-Channel MOSFET 200 V, 8-Pin TDSON Infineon BSC22DN20NS3GATMA1
- N-Channel MOSFET 40 V, 8-Pin TDSON Infineon BSC026N04LSATMA1
- N-Channel MOSFET 100 V, 8-Pin TDSON Infineon IAUC90N10S5N062ATMA1