Infineon BSC12DN20NS3 G Type N-Channel MOSFET, 11.3 A, 200 V Enhancement, 8-Pin TDSON BSC12DN20NS3GATMA1
- RS stock no.:
- 171-1952
- Mfr. Part No.:
- BSC12DN20NS3GATMA1
- Manufacturer:
- Infineon
Image representative of range
Bulk discount available
Subtotal (1 pack of 10 units)*
R 234,87
(exc. VAT)
R 270,10
(inc. VAT)
FREE delivery for orders over R 1,500.00
Temporarily out of stock
- Shipping from 16 July 2026
Need more? Click ‘Check delivery dates’ to find extra stock and lead times.
Units | Per unit | Per Pack* |
|---|---|---|
| 10 - 90 | R 23.487 | R 234.87 |
| 100 - 490 | R 22.90 | R 229.00 |
| 500 - 990 | R 22.213 | R 222.13 |
| 1000 - 2490 | R 21.324 | R 213.24 |
| 2500 + | R 20.471 | R 204.71 |
*price indicative
- RS stock no.:
- 171-1952
- Mfr. Part No.:
- BSC12DN20NS3GATMA1
- Manufacturer:
- Infineon
Specification
Technical data sheets
Legislation and Compliance
Product Details
Find similar products by selecting one or more attributes.
Select all | Attribute | Value |
|---|---|---|
| Brand | Infineon | |
| Product Type | MOSFET | |
| Channel Type | Type N | |
| Maximum Continuous Drain Current Id | 11.3A | |
| Maximum Drain Source Voltage Vds | 200V | |
| Series | BSC12DN20NS3 G | |
| Package Type | TDSON | |
| Mount Type | Surface | |
| Pin Count | 8 | |
| Maximum Drain Source Resistance Rds | 125mΩ | |
| Channel Mode | Enhancement | |
| Typical Gate Charge Qg @ Vgs | 6.5nC | |
| Maximum Power Dissipation Pd | 50W | |
| Forward Voltage Vf | 1V | |
| Minimum Operating Temperature | -55°C | |
| Maximum Gate Source Voltage Vgs | 20 V | |
| Maximum Operating Temperature | 150°C | |
| Length | 5.35mm | |
| Height | 1.1mm | |
| Standards/Approvals | No | |
| Width | 6.35 mm | |
| Automotive Standard | No | |
| Select all | ||
|---|---|---|
Brand Infineon | ||
Product Type MOSFET | ||
Channel Type Type N | ||
Maximum Continuous Drain Current Id 11.3A | ||
Maximum Drain Source Voltage Vds 200V | ||
Series BSC12DN20NS3 G | ||
Package Type TDSON | ||
Mount Type Surface | ||
Pin Count 8 | ||
Maximum Drain Source Resistance Rds 125mΩ | ||
Channel Mode Enhancement | ||
Typical Gate Charge Qg @ Vgs 6.5nC | ||
Maximum Power Dissipation Pd 50W | ||
Forward Voltage Vf 1V | ||
Minimum Operating Temperature -55°C | ||
Maximum Gate Source Voltage Vgs 20 V | ||
Maximum Operating Temperature 150°C | ||
Length 5.35mm | ||
Height 1.1mm | ||
Standards/Approvals No | ||
Width 6.35 mm | ||
Automotive Standard No | ||
The Infineon BSC12DN20NS3 G 200V OptiMOS products are performance leading Benchmark technologies, perfectly suited for synchronous rectification in 48V systems, DC-DC converters, uninterruptable power supplies (UPS) and inverters for DC motor drives.
Highest efficiency
Highest power density
Lowest board space consumption
Minimal device paralleling required
System cost improvement
Related links
- Infineon BSC12DN20NS3 G Type N-Channel MOSFET 200 V Enhancement, 8-Pin TDSON
- Infineon BSZ12DN20NS3 G Type N-Channel MOSFET 200 V Enhancement, 8-Pin PG-TSDSON-8 BSZ12DN20NS3GATMA1
- Infineon BSZ12DN20NS3 G Type N-Channel MOSFET 200 V Enhancement, 8-Pin PG-TSDSON-8
- Infineon BSC500N20NS3 G Type N-Channel MOSFET 200 V Enhancement, 8-Pin TDSON
- Infineon BSC500N20NS3 G Type N-Channel MOSFET 200 V Enhancement, 8-Pin TDSON BSC500N20NS3GATMA1
- Infineon OptiMOS™ 3 N-Channel MOSFET 200 V, 8-Pin TSDSON BSZ12DN20NS3GATMA1
- Infineon BSC050N04LS G Type N-Channel MOSFET 40 V Enhancement, 8-Pin TDSON
- Infineon BSC050N04LS G Type N-Channel MOSFET 40 V Enhancement, 8-Pin TDSON BSC050N04LSGATMA1