Infineon BSC12DN20NS3 G Type N-Channel MOSFET, 11.3 A, 200 V Enhancement, 8-Pin TDSON BSC12DN20NS3GATMA1

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Subtotal (1 pack of 10 units)*

R 241,09

(exc. VAT)

R 277,25

(inc. VAT)

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Units
Per unit
Per Pack*
10 - 90R 24.109R 241.09
100 - 490R 23.506R 235.06
500 - 990R 22.801R 228.01
1000 - 2490R 21.889R 218.89
2500 +R 21.013R 210.13

*price indicative

Packaging Options:
RS stock no.:
171-1952
Mfr. Part No.:
BSC12DN20NS3GATMA1
Manufacturer:
Infineon
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Brand

Infineon

Channel Type

Type N

Product Type

MOSFET

Maximum Continuous Drain Current Id

11.3A

Maximum Drain Source Voltage Vds

200V

Series

BSC12DN20NS3 G

Package Type

TDSON

Mount Type

Surface

Pin Count

8

Maximum Drain Source Resistance Rds

125mΩ

Channel Mode

Enhancement

Forward Voltage Vf

1V

Typical Gate Charge Qg @ Vgs

6.5nC

Minimum Operating Temperature

-55°C

Maximum Gate Source Voltage Vgs

20 V

Maximum Power Dissipation Pd

50W

Maximum Operating Temperature

150°C

Length

5.35mm

Height

1.1mm

Width

6.35 mm

Standards/Approvals

No

Automotive Standard

No

The Infineon BSC12DN20NS3 G 200V OptiMOS products are performance leading Benchmark technologies, perfectly suited for synchronous rectification in 48V systems, DC-DC converters, uninterruptable power supplies (UPS) and inverters for DC motor drives.

Highest efficiency

Highest power density

Lowest board space consumption

Minimal device paralleling required

System cost improvement

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