Name: Infineon BSZ12DN20NS3 G Type N-Channel MOSFET, 11.3 A, 200 V Enhancement, 8-Pin PG-TSDSON-8 BSZ12DN20NS3GATMA1
Brand: Infineon
SKU: 273-5249
Price: 14.68 ZAR
Availability: Discontinued

Specification

Technical data sheets

Legislation and Compliance

Product Details

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Select all	Attribute	Value
	Brand	Infineon
	Product Type	MOSFET
	Channel Type	Type N
	Maximum Continuous Drain Current Id	11.3A
	Maximum Drain Source Voltage Vds	200V
	Series	BSZ12DN20NS3 G
	Package Type	PG-TSDSON-8
	Mount Type	Surface
	Pin Count	8
	Channel Mode	Enhancement
	Minimum Operating Temperature	-55°C
	Maximum Power Dissipation Pd	50W
	Typical Gate Charge Qg @ Vgs	6.5nC
	Forward Voltage Vf	1V
	Maximum Gate Source Voltage Vgs	20 V
	Maximum Operating Temperature	150°C
	Width	40 mm
	Standards/Approvals	IEC61249-2-21, JEDEC1
	Height	1.5mm
	Length	40mm
	Automotive Standard	No

	Select all
	Brand Infineon
	Product Type MOSFET
	Channel Type Type N
	Maximum Continuous Drain Current Id 11.3A
	Maximum Drain Source Voltage Vds 200V
	Series BSZ12DN20NS3 G
	Package Type PG-TSDSON-8
	Mount Type Surface
	Pin Count 8
	Channel Mode Enhancement
	Minimum Operating Temperature -55°C
	Maximum Power Dissipation Pd 50W
	Typical Gate Charge Qg @ Vgs 6.5nC
	Forward Voltage Vf 1V
	Maximum Gate Source Voltage Vgs 20 V
	Maximum Operating Temperature 150°C
	Width 40 mm
	Standards/Approvals IEC61249-2-21, JEDEC1
	Height 1.5mm
	Length 40mm
	Automotive Standard No

Datasheet - BSZ12DN20NS3GATMA1

The Infineon MOSFET is a N channel power MOSFET. This MOSFET has an excellent gate charge. It is qualified according to JEDEC for target applications and 150 degree Celsius operating temperature. It is a optimized for dc to dc conversion.

Halogen free

RoHS compliant

Pb free lead plating

Very low on resistance

Infineon BSZ12DN20NS3 G Type N-Channel MOSFET, 11.3 A, 200 V Enhancement, 8-Pin PG-TSDSON-8 BSZ12DN20NS3GATMA1

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