Infineon BSZ12DN20NS3 G Type N-Channel MOSFET, 11.3 A, 200 V Enhancement, 8-Pin PG-TSDSON-8

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Subtotal (1 pack of 5 units)*

R 598,77

(exc. VAT)

R 688,585

(inc. VAT)

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Units
Per unit
Per Pack*
5 - 45R 119.754R 598.77
50 - 495R 116.76R 583.80
500 - 995R 113.258R 566.29
1000 - 2495R 108.728R 543.64
2500 +R 104.378R 521.89

*price indicative

RS stock no.:
273-5250
Mfr. Part No.:
BSZ12DN20NS3GATMA1
Manufacturer:
Infineon
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Brand

Infineon

Product Type

MOSFET

Channel Type

Type N

Maximum Continuous Drain Current Id

11.3A

Maximum Drain Source Voltage Vds

200V

Series

BSZ12DN20NS3 G

Package Type

PG-TSDSON-8

Mount Type

Surface

Pin Count

8

Channel Mode

Enhancement

Maximum Power Dissipation Pd

50W

Typical Gate Charge Qg @ Vgs

6.5nC

Forward Voltage Vf

1V

Minimum Operating Temperature

-55°C

Maximum Operating Temperature

150°C

Length

40mm

Standards/Approvals

IEC61249-2-21, JEDEC1

Height

1.5mm

Automotive Standard

No

The Infineon MOSFET is a N channel power MOSFET. This MOSFET has an excellent gate charge. It is qualified according to JEDEC for target applications and 150 degree Celsius operating temperature. It is a optimized for dc to dc conversion.

Halogen free

RoHS compliant

Pb free lead plating

Very low on resistance

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