IXYS Polar HiPerFET Type N-Channel MOSFET, 200 A, 100 V Enhancement, 4-Pin SOT-227

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Subtotal (1 tube of 10 units)*

R 4 902,92

(exc. VAT)

R 5 638,36

(inc. VAT)

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  • Plus 140 unit(s) shipping from 29 December 2025
  • Plus 670 unit(s) shipping from 05 January 2026
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Units
Per unit
Per Tube*
10 +R 490.292R 4,902.92

*price indicative

RS stock no.:
168-4576
Mfr. Part No.:
IXFN200N10P
Manufacturer:
IXYS
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Brand

IXYS

Product Type

MOSFET

Channel Type

Type N

Maximum Continuous Drain Current Id

200A

Maximum Drain Source Voltage Vds

100V

Package Type

SOT-227

Series

Polar HiPerFET

Mount Type

Surface

Pin Count

4

Maximum Drain Source Resistance Rds

7.5mΩ

Channel Mode

Enhancement

Typical Gate Charge Qg @ Vgs

235nC

Minimum Operating Temperature

-55°C

Maximum Power Dissipation Pd

680W

Maximum Gate Source Voltage Vgs

20 V

Forward Voltage Vf

1.5V

Maximum Operating Temperature

175°C

Height

9.6mm

Standards/Approvals

No

Width

25.07 mm

Length

38.23mm

Automotive Standard

No

COO (Country of Origin):
PH

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