IXYS Polar HiPerFET Type N-Channel MOSFET, 200 A, 100 V Enhancement, 4-Pin SOT-227 IXFN200N10P

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R 564,20

(exc. VAT)

R 648,83

(inc. VAT)

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Units
Per unit
1 - 1R 564.20
2 - 4R 550.10
5 - 9R 533.60
10 - 19R 512.26
20 +R 491.77

*price indicative

RS stock no.:
125-8040
Mfr. Part No.:
IXFN200N10P
Manufacturer:
IXYS
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Brand

IXYS

Product Type

MOSFET

Channel Type

Type N

Maximum Continuous Drain Current Id

200A

Maximum Drain Source Voltage Vds

100V

Package Type

SOT-227

Series

Polar HiPerFET

Mount Type

Surface

Pin Count

4

Maximum Drain Source Resistance Rds

7.5mΩ

Channel Mode

Enhancement

Typical Gate Charge Qg @ Vgs

235nC

Maximum Power Dissipation Pd

680W

Maximum Gate Source Voltage Vgs

20 V

Minimum Operating Temperature

-55°C

Forward Voltage Vf

1.5V

Maximum Operating Temperature

175°C

Length

38.23mm

Standards/Approvals

No

Width

25.07 mm

Height

9.6mm

Automotive Standard

No

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