IXYS Polar HiPerFET Type N-Channel MOSFET, 200 A, 100 V Enhancement, 4-Pin SOT-227 IXFN200N10P

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Subtotal (1 unit)*

R 540,63

(exc. VAT)

R 621,72

(inc. VAT)

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Units
Per unit
1 - 1R 540.63
2 - 4R 527.11
5 - 9R 511.30
10 - 19R 490.85
20 +R 471.22

*price indicative

RS stock no.:
125-8040
Mfr. Part No.:
IXFN200N10P
Manufacturer:
IXYS
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Brand

IXYS

Channel Type

Type N

Product Type

MOSFET

Maximum Continuous Drain Current Id

200A

Maximum Drain Source Voltage Vds

100V

Package Type

SOT-227

Series

Polar HiPerFET

Mount Type

Surface

Pin Count

4

Maximum Drain Source Resistance Rds

7.5mΩ

Channel Mode

Enhancement

Maximum Gate Source Voltage Vgs

20 V

Forward Voltage Vf

1.5V

Minimum Operating Temperature

-55°C

Maximum Power Dissipation Pd

680W

Typical Gate Charge Qg @ Vgs

235nC

Maximum Operating Temperature

175°C

Width

25.07 mm

Height

9.6mm

Length

38.23mm

Standards/Approvals

No

Automotive Standard

No

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