Vishay TrenchFET N-Channel MOSFET, 70.6 A, 80 V Enhancement, 8-Pin SO-8 SiR880BDP-T1-RE3

Image representative of range

View all MOSFETs
Bulk discount available
View bulk pricing options

Subtotal (1 pack of 10 units)*

R 216,35

(exc. VAT)

R 248,80

(inc. VAT)

Add to Basket
Select or type quantity
Stock information currently inaccessible - Please check back later

Units
Per unit
Per Pack*
10 - 40R 21.635R 216.35
50 - 90R 21.094R 210.94
100 - 240R 20.461R 204.61
250 - 990R 19.643R 196.43
1000 +R 18.857R 188.57

*price indicative

Packaging Options:
RS stock no.:
228-2914
Mfr. Part No.:
SiR880BDP-T1-RE3
Manufacturer:
Vishay
Find similar products by selecting one or more attributes.
Select all

Brand

Vishay

Product Type

MOSFET

Channel Type

N

Maximum Continuous Drain Current Id

70.6A

Maximum Drain Source Voltage Vds

80V

Package Type

SO-8

Series

TrenchFET

Mount Type

Surface

Pin Count

8

Maximum Drain Source Resistance Rds

6.5mΩ

Channel Mode

Enhancement

Typical Gate Charge Qg @ Vgs

43.5nC

Maximum Power Dissipation Pd

71.4W

Minimum Operating Temperature

-55°C

Maximum Gate Source Voltage Vgs

20V

Maximum Operating Temperature

150°C

Standards/Approvals

No

Automotive Standard

No

The Vishay TrenchFET N-channel is 80 V MOSFET.

100 % Rg and UIS tested

Related links