Vishay TrenchFET Type N-Channel MOSFET, 70.6 A, 80 V Enhancement, 8-Pin SO-8 SiR880BDP-T1-RE3

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Subtotal (1 pack of 10 units)*

R 216,62

(exc. VAT)

R 249,11

(inc. VAT)

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Units
Per unit
Per Pack*
10 - 40R 21.662R 216.62
50 - 90R 21.12R 211.20
100 - 240R 20.486R 204.86
250 - 990R 19.667R 196.67
1000 +R 18.88R 188.80

*price indicative

Packaging Options:
RS stock no.:
228-2914
Mfr. Part No.:
SiR880BDP-T1-RE3
Manufacturer:
Vishay
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Brand

Vishay

Channel Type

Type N

Product Type

MOSFET

Maximum Continuous Drain Current Id

70.6A

Maximum Drain Source Voltage Vds

80V

Series

TrenchFET

Package Type

SO-8

Mount Type

Surface

Pin Count

8

Maximum Drain Source Resistance Rds

6.5mΩ

Channel Mode

Enhancement

Maximum Gate Source Voltage Vgs

20 V

Typical Gate Charge Qg @ Vgs

43.5nC

Minimum Operating Temperature

-55°C

Maximum Power Dissipation Pd

71.4W

Maximum Operating Temperature

150°C

Standards/Approvals

No

Automotive Standard

No

The Vishay TrenchFET N-channel is 80 V MOSFET.

100 % Rg and UIS tested

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