Vishay TrenchFET Type N-Channel MOSFET, 70.6 A, 80 V Enhancement, 8-Pin SO-8

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Subtotal (1 reel of 3000 units)*

R 28 932,00

(exc. VAT)

R 33 273,00

(inc. VAT)

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3000 +R 9.644R 28,932.00

*price indicative

RS stock no.:
228-2913
Mfr. Part No.:
SiR880BDP-T1-RE3
Manufacturer:
Vishay
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Brand

Vishay

Product Type

MOSFET

Channel Type

Type N

Maximum Continuous Drain Current Id

70.6A

Maximum Drain Source Voltage Vds

80V

Package Type

SO-8

Series

TrenchFET

Mount Type

Surface

Pin Count

8

Maximum Drain Source Resistance Rds

6.5mΩ

Channel Mode

Enhancement

Maximum Power Dissipation Pd

71.4W

Minimum Operating Temperature

-55°C

Typical Gate Charge Qg @ Vgs

43.5nC

Maximum Gate Source Voltage Vgs

20 V

Maximum Operating Temperature

150°C

Standards/Approvals

No

Automotive Standard

No

The Vishay TrenchFET N-channel is 80 V MOSFET.

100 % Rg and UIS tested

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