Toshiba Type N-Channel MOSFET, 30.8 A, 600 V Enhancement, 5-Pin DFN TK31V60W5

Image representative of range

Bulk discount available
View bulk pricing options

Subtotal (1 pack of 2 units)*

R 243,58

(exc. VAT)

R 280,12

(inc. VAT)

Add to Basket
Select or type quantity
Temporarily out of stock
  • Shipping from 09 December 2026
Need more? Click ‘Check delivery dates’ to find extra stock and lead times.

Units
Per unit
Per Pack*
2 - 18R 121.79R 243.58
20 - 38R 118.745R 237.49
40 - 98R 115.185R 230.37
100 - 198R 110.58R 221.16
200 +R 106.155R 212.31

*price indicative

Packaging Options:
RS stock no.:
171-2526
Mfr. Part No.:
TK31V60W5
Manufacturer:
Toshiba
Find similar products by selecting one or more attributes.
Select all

Brand

Toshiba

Product Type

MOSFET

Channel Type

Type N

Maximum Continuous Drain Current Id

30.8A

Maximum Drain Source Voltage Vds

600V

Package Type

DFN

Mount Type

Surface

Pin Count

5

Maximum Drain Source Resistance Rds

109mΩ

Channel Mode

Enhancement

Maximum Power Dissipation Pd

240W

Minimum Operating Temperature

-55°C

Forward Voltage Vf

-1.7V

Typical Gate Charge Qg @ Vgs

105nC

Maximum Operating Temperature

150°C

Height

0.85mm

Length

8mm

Standards/Approvals

No

Automotive Standard

No

Not Applicable

COO (Country of Origin):
CN
Switching Voltage Regulators

Fast reverse recovery time: trr = 135 ns (typ.)

Low drain-source on-resistance: RDS(ON) = 0.087 Ω(typ.)

Easy to control Gate switching

Enhancement mode: Vth = 3 to 4.5 V (VDS = 10 V, ID = 1.5 mA)

Related links

Be the first to know about our latest products and offers

Email address

The personal information you provide to us when signing up to this mailing list will be processed in line with the Privacy Policy