Toshiba Type N-Channel MOSFET, 30.8 A, 600 V Enhancement, 5-Pin DFN TK31V60W5

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Subtotal (1 pack of 2 units)*

R 239,14

(exc. VAT)

R 275,02

(inc. VAT)

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Units
Per unit
Per Pack*
2 - 18R 119.57R 239.14
20 - 38R 116.58R 233.16
40 - 98R 113.085R 226.17
100 - 198R 108.56R 217.12
200 +R 104.22R 208.44

*price indicative

Packaging Options:
RS stock no.:
171-2526
Mfr. Part No.:
TK31V60W5
Manufacturer:
Toshiba
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Brand

Toshiba

Channel Type

Type N

Product Type

MOSFET

Maximum Continuous Drain Current Id

30.8A

Maximum Drain Source Voltage Vds

600V

Package Type

DFN

Mount Type

Surface

Pin Count

5

Maximum Drain Source Resistance Rds

109mΩ

Channel Mode

Enhancement

Maximum Power Dissipation Pd

240W

Minimum Operating Temperature

-55°C

Forward Voltage Vf

-1.7V

Typical Gate Charge Qg @ Vgs

105nC

Maximum Operating Temperature

150°C

Length

8mm

Height

0.85mm

Standards/Approvals

No

Automotive Standard

No

Exempt

COO (Country of Origin):
CN
Switching Voltage Regulators

Fast reverse recovery time: trr = 135 ns (typ.)

Low drain-source on-resistance: RDS(ON) = 0.087 Ω(typ.)

Easy to control Gate switching

Enhancement mode: Vth = 3 to 4.5 V (VDS = 10 V, ID = 1.5 mA)

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