Vishay TrenchFET N channel-Channel MOSFET, 373 A, 60 V Enhancement, 8-Pin SO-8SW SIRS4600EPW-T1-RE3

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Subtotal (1 unit)*

R 100,48

(exc. VAT)

R 115,55

(inc. VAT)

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Units
Per unit
1 - 9R 100.48
10 - 49R 62.34
50 - 99R 48.15
100 +R 32.56

*price indicative

RS stock no.:
735-219
Mfr. Part No.:
SIRS4600EPW-T1-RE3
Manufacturer:
Vishay
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Brand

Vishay

Product Type

MOSFET

Channel Type

N channel

Maximum Continuous Drain Current Id

373A

Maximum Drain Source Voltage Vds

60V

Series

TrenchFET

Package Type

SO-8SW

Mount Type

Surface Mount

Pin Count

8

Maximum Drain Source Resistance Rds

0.0013Ω

Channel Mode

Enhancement

Minimum Operating Temperature

-55°C

Maximum Gate Source Voltage Vgs

±20 V

Typical Gate Charge Qg @ Vgs

108nC

Maximum Power Dissipation Pd

333W

Maximum Operating Temperature

150°C

Width

5.1 mm

Standards/Approvals

RoHS Compliant

Height

0.95mm

Length

6.1mm

Automotive Standard

No

COO (Country of Origin):
CN

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