ROHM RD3N045AT Type P-Channel Single MOSFETs, 80 V Enhancement, 3-Pin TO-252 (TL) RD3N045ATTL1

RS stock no.:: 687-488
Mfr. Part No.:: RD3N045ATTL1
Manufacturer:: ROHM

ROHM RD3N045AT Type P-Channel Single MOSFETs, 80 V Enhancement, 3-Pin TO-252 (TL) RD3N045ATTL1

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Bulk discount available

Subtotal (1 tape of 2 units)*

R 22,75

(exc. VAT)

R 26,162

(inc. VAT)

FREE delivery for orders over R 1,500.00

Temporarily out of stock

Shipping from 21 January 2026

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Units	Per unit	Per Tape*
2 - 48	R 11.375	R 22.75
50 - 198	R 11.09	R 22.18
200 - 998	R 10.755	R 21.51
1000 +	R 10.325	R 20.65

*price indicative

RS stock no.:: 687-488
Mfr. Part No.:: RD3N045ATTL1
Manufacturer:: ROHM

Specification

Technical data sheets

Legislation and Compliance

Product Details

Find similar products by selecting one or more attributes.

Select all	Attribute	Value
	Brand	ROHM
	Channel Type	Type P
	Product Type	Single MOSFETs
	Maximum Drain Source Voltage Vds	80V
	Series	RD3N045AT
	Package Type	TO-252 (TL)
	Mount Type	Surface
	Pin Count	3
	Maximum Drain Source Resistance Rds	650mΩ
	Channel Mode	Enhancement
	Minimum Operating Temperature	-55°C
	Maximum Power Dissipation Pd	17W
	Maximum Gate Source Voltage Vgs	±20 V
	Typical Gate Charge Qg @ Vgs	5.9nC
	Maximum Operating Temperature	175°C
	Standards/Approvals	AEC-Q101, RoHS
	Height	2.3mm
	Width	6.8 mm
	Length	10.50mm
	Automotive Standard	AEC-Q101

	Select all
	Brand ROHM
	Channel Type Type P
	Product Type Single MOSFETs
	Maximum Drain Source Voltage Vds 80V
	Series RD3N045AT
	Package Type TO-252 (TL)
	Mount Type Surface
	Pin Count 3
	Maximum Drain Source Resistance Rds 650mΩ
	Channel Mode Enhancement
	Minimum Operating Temperature -55°C
	Maximum Power Dissipation Pd 17W
	Maximum Gate Source Voltage Vgs ±20 V
	Typical Gate Charge Qg @ Vgs 5.9nC
	Maximum Operating Temperature 175°C
	Standards/Approvals AEC-Q101, RoHS
	Height 2.3mm
	Width 6.8 mm
	Length 10.50mm
	Automotive Standard AEC-Q101

Datasheet - RD3N045ATTL1

COO (Country of Origin):: JP

The ROHM P channel MOSFET designed for a variety of power applications. With a drain-source voltage rating of -80V and a continuous drain current capability of -4.5A, this MOSFET provides excellent electrical performance for demanding environments. Its low on-resistance of 650mΩ maximises efficiency while minimising heat generation, contributing to superior overall reliability. RoHS compliant and featuring a robust TO-252 package, the RD3N045AT is ideal for motor drives and other switching applications, ensuring robust operation in high-power scenarios. The device is rigorously tested for gate reliability and features are also halogen-free, supporting environmentally friendly practices.

Low on resistance of 650mΩ enhances efficiency and reduces power losses

Provides high power handling capabilities with a maximum power dissipation of 17W

Rated for a maximum junction temperature of 150°C, ensuring reliability under strenuous conditions

Pulsed drain current capacity of ±9A supports transient load applications

Gate-source voltage tolerance of ±20V allows for flexible circuit designs

Ideal for motor drive applications, enhancing performance in electric motors

RoHS compliant construction promotes environmental sustainability

Tested for 100% Rg and UIS reliability, ensuring robust long-term performance

ROHM RD3N045AT Type P-Channel Single MOSFETs, 80 V Enhancement, 3-Pin TO-252 (TL) RD3N045ATTL1

FREE delivery for orders over R 1,500.00

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