ROHM RD3E08BBJHRB Type P-Channel Single MOSFETs, -30 V Enhancement, 3-Pin TO-252 (TL) RD3E08BBJHRBTL

RS stock no.:: 687-362
Mfr. Part No.:: RD3E08BBJHRBTL
Manufacturer:: ROHM

ROHM RD3E08BBJHRB Type P-Channel Single MOSFETs, -30 V Enhancement, 3-Pin TO-252 (TL) RD3E08BBJHRBTL

Image representative of range

Bulk discount available

Subtotal (1 tape of 2 units)*

R 70,20

(exc. VAT)

R 80,72

(inc. VAT)

FREE delivery for orders over R 1,500.00

Temporarily out of stock

Shipping from 23 January 2026

Need more? Click ‘Check delivery dates’ to find extra stock and lead times.

Units	Per unit	Per Tape*
2 - 18	R 35.10	R 70.20
20 - 48	R 34.225	R 68.45
50 - 198	R 33.20	R 66.40
200 - 998	R 31.87	R 63.74
1000 +	R 30.595	R 61.19

*price indicative

RS stock no.:: 687-362
Mfr. Part No.:: RD3E08BBJHRBTL
Manufacturer:: ROHM

Specification

Technical data sheets

Legislation and Compliance

Product Details

Find similar products by selecting one or more attributes.

Select all	Attribute	Value
	Brand	ROHM
	Product Type	Single MOSFETs
	Channel Type	Type P
	Maximum Drain Source Voltage Vds	-30V
	Series	RD3E08BBJHRB
	Package Type	TO-252 (TL)
	Mount Type	Surface
	Pin Count	3
	Maximum Drain Source Resistance Rds	3.7mΩ
	Channel Mode	Enhancement
	Maximum Power Dissipation Pd	142W
	Minimum Operating Temperature	-55°C
	Maximum Gate Source Voltage Vgs	5 V
	Typical Gate Charge Qg @ Vgs	150nC
	Maximum Operating Temperature	175°C
	Height	2.3mm
	Standards/Approvals	AEC-Q101, RoHS
	Width	6.8 mm
	Length	10.50mm
	Automotive Standard	AEC-Q101

	Select all
	Brand ROHM
	Product Type Single MOSFETs
	Channel Type Type P
	Maximum Drain Source Voltage Vds -30V
	Series RD3E08BBJHRB
	Package Type TO-252 (TL)
	Mount Type Surface
	Pin Count 3
	Maximum Drain Source Resistance Rds 3.7mΩ
	Channel Mode Enhancement
	Maximum Power Dissipation Pd 142W
	Minimum Operating Temperature -55°C
	Maximum Gate Source Voltage Vgs 5 V
	Typical Gate Charge Qg @ Vgs 150nC
	Maximum Operating Temperature 175°C
	Height 2.3mm
	Standards/Approvals AEC-Q101, RoHS
	Width 6.8 mm
	Length 10.50mm
	Automotive Standard AEC-Q101

Datasheet - RD3E08BBJHRBTL

COO (Country of Origin):: JP

The ROHM Power MOSFET designed for demanding applications requiring low on-resistance and high current handling capabilities. This robust device operates at a maximum drain-source voltage of -30V and a continuous drain current of ±80A, ensuring efficient performance in power management systems. Its innovative construction includes a thermal resistance of just 1.05 °C/W, optimising reliability and facilitating effective heat dissipation. With AEC-Q101 qualification, this MOSFET is suitable for automotive applications, thriving in environments prone to extreme temperature variations and ensuring dependable operation under challenging conditions.

Delivers low on resistance of 3.7 mΩ, enhancing efficiency and minimising energy loss

Pulsed drain current capability of ±160A, accommodating high-demand applications

Gate-source voltage ratings of +5/-20V ensure versatile operation and robust control

Assemblable in a DPAK package for efficient thermal management and compact footprint

Avalanche tested for improved reliability in high-stress electrical environments

AEC Q101 qualified, making it ideal for safety-critical automotive applications.

ROHM RD3E08BBJHRB Type P-Channel Single MOSFETs, -30 V Enhancement, 3-Pin TO-252 (TL) RD3E08BBJHRBTL

FREE delivery for orders over R 1,500.00

Related links