ROHM AG502EED3HRB Type P-Channel Single MOSFETs, -30 V Enhancement, 3-Pin TO-252 (TL) AG502EED3HRBTL

RS stock no.:: 687-467
Mfr. Part No.:: AG502EED3HRBTL
Manufacturer:: ROHM

ROHM AG502EED3HRB Type P-Channel Single MOSFETs, -30 V Enhancement, 3-Pin TO-252 (TL) AG502EED3HRBTL

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Bulk discount available

Subtotal (1 tape of 2 units)*

R 43,45

(exc. VAT)

R 49,968

(inc. VAT)

FREE delivery for orders over R 1,500.00

Temporarily out of stock

Shipping from 23 January 2026

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Units	Per unit	Per Tape*
2 - 18	R 21.725	R 43.45
20 - 48	R 21.18	R 42.36
50 - 198	R 20.545	R 41.09
200 - 998	R 19.725	R 39.45
1000 +	R 18.935	R 37.87

*price indicative

RS stock no.:: 687-467
Mfr. Part No.:: AG502EED3HRBTL
Manufacturer:: ROHM

Specification

Technical data sheets

Legislation and Compliance

Product Details

Find similar products by selecting one or more attributes.

Select all	Attribute	Value
	Brand	ROHM
	Product Type	Single MOSFETs
	Channel Type	Type P
	Maximum Drain Source Voltage Vds	-30V
	Package Type	TO-252 (TL)
	Series	AG502EED3HRB
	Mount Type	Surface
	Pin Count	3
	Maximum Drain Source Resistance Rds	8.5mΩ
	Channel Mode	Enhancement
	Maximum Gate Source Voltage Vgs	5 V
	Typical Gate Charge Qg @ Vgs	52nC
	Minimum Operating Temperature	-55°C
	Maximum Power Dissipation Pd	77W
	Maximum Operating Temperature	175°C
	Height	2.3mm
	Width	6.80 mm
	Length	10.50mm
	Standards/Approvals	AEC-Q101, RoHS
	Automotive Standard	AEC-Q101

	Select all
	Brand ROHM
	Product Type Single MOSFETs
	Channel Type Type P
	Maximum Drain Source Voltage Vds -30V
	Package Type TO-252 (TL)
	Series AG502EED3HRB
	Mount Type Surface
	Pin Count 3
	Maximum Drain Source Resistance Rds 8.5mΩ
	Channel Mode Enhancement
	Maximum Gate Source Voltage Vgs 5 V
	Typical Gate Charge Qg @ Vgs 52nC
	Minimum Operating Temperature -55°C
	Maximum Power Dissipation Pd 77W
	Maximum Operating Temperature 175°C
	Height 2.3mm
	Width 6.80 mm
	Length 10.50mm
	Standards/Approvals AEC-Q101, RoHS
	Automotive Standard AEC-Q101

Datasheet - AG502EED3HRBTL

COO (Country of Origin):: JP

The ROHM Power MOSFET designed for efficient and reliable energy management in automotive systems. Featuring a maximum drain-source voltage of -30V and continuous drain current capability of up to 78A, this device is ideal for demanding applications requiring robust power handling. Its low on-resistance of 8.5mΩ minimises power loss, contributing to enhanced thermal efficiency. Additionally, the MOSFET is qualified under AEC-Q101 standards, ensuring it meets rigorous automotive requirements for durability and performance. With excellent avalanche characteristics and a wide operational temperature range, the AG502EED3HRB ensures consistent performance under diverse conditions.

Robust construction with AEC Q101 qualification for automotive applications

Low on resistance of 8.5mΩ, optimising energy efficiency

Max continuous drain current of 78A enables handling of demanding loads

Wide operating temperature range from -55°C to 175°C for reliable performance

Thermal resistance of 1.94°C/W enhances heat dissipation capabilities

100% Avalanche tested, ensuring high reliability under transient conditions

Pb free plating and compliance with RoHS standards for environmentally-friendly design

ROHM AG502EED3HRB Type P-Channel Single MOSFETs, -30 V Enhancement, 3-Pin TO-252 (TL) AG502EED3HRBTL

FREE delivery for orders over R 1,500.00

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