ROHM RD3P06BBKH Type N-Channel MOSFET, 59 A, 100 V Depletion, 8-Pin TO-252 RD3P06BBKHRBTL
- RS stock no.:
- 264-943
- Mfr. Part No.:
- RD3P06BBKHRBTL
- Manufacturer:
- ROHM
Image representative of range
Bulk discount available
Subtotal (1 tape of 5 units)*
R 123,51
(exc. VAT)
R 142,035
(inc. VAT)
FREE delivery for orders over R 1,500.00
Temporarily out of stock
- 85 unit(s) shipping from 19 February 2026
Need more? Click ‘Check delivery dates’ to find extra stock and lead times.
Units | Per unit | Per Tape* |
|---|---|---|
| 5 - 45 | R 24.702 | R 123.51 |
| 50 - 95 | R 24.084 | R 120.42 |
| 100 - 495 | R 23.362 | R 116.81 |
| 500 - 995 | R 22.428 | R 112.14 |
| 1000 + | R 21.53 | R 107.65 |
*price indicative
- RS stock no.:
- 264-943
- Mfr. Part No.:
- RD3P06BBKHRBTL
- Manufacturer:
- ROHM
Specification
Technical data sheets
Legislation and Compliance
Product Details
Find similar products by selecting one or more attributes.
Select all | Attribute | Value |
|---|---|---|
| Brand | ROHM | |
| Product Type | MOSFET | |
| Channel Type | Type N | |
| Maximum Continuous Drain Current Id | 59A | |
| Maximum Drain Source Voltage Vds | 100V | |
| Package Type | TO-252 | |
| Series | RD3P06BBKH | |
| Mount Type | Surface | |
| Pin Count | 8 | |
| Maximum Drain Source Resistance Rds | 15.8mΩ | |
| Channel Mode | Depletion | |
| Forward Voltage Vf | 1.5V | |
| Typical Gate Charge Qg @ Vgs | 17.3nC | |
| Maximum Power Dissipation Pd | 76W | |
| Maximum Gate Source Voltage Vgs | 20 V | |
| Minimum Operating Temperature | -55°C | |
| Maximum Operating Temperature | 175°C | |
| Standards/Approvals | RoHS, AEC-Q101 | |
| Automotive Standard | AEC-Q101 | |
| Select all | ||
|---|---|---|
Brand ROHM | ||
Product Type MOSFET | ||
Channel Type Type N | ||
Maximum Continuous Drain Current Id 59A | ||
Maximum Drain Source Voltage Vds 100V | ||
Package Type TO-252 | ||
Series RD3P06BBKH | ||
Mount Type Surface | ||
Pin Count 8 | ||
Maximum Drain Source Resistance Rds 15.8mΩ | ||
Channel Mode Depletion | ||
Forward Voltage Vf 1.5V | ||
Typical Gate Charge Qg @ Vgs 17.3nC | ||
Maximum Power Dissipation Pd 76W | ||
Maximum Gate Source Voltage Vgs 20 V | ||
Minimum Operating Temperature -55°C | ||
Maximum Operating Temperature 175°C | ||
Standards/Approvals RoHS, AEC-Q101 | ||
Automotive Standard AEC-Q101 | ||
The ROHM MOSFET, engineered for robust applications requiring high efficiency and reliability. With a breaking voltage of up to 100V and a continuous drain current of 59A, this device is designed for demanding tasks in automotive and industrial environments. It features a compact DPAK/TO-252 package, allowing for easy integration into various circuit designs.
Suitable for various applications including automotive and industrial electronics
Pulsed drain current capability of up to 118A underscores versatility in demanding environments
Utilises Pd free plating ensuring compatibility with modern production processes
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