Infineon IRF3710ZS N-Channel MOSFET, 59 A, 100 V Enhancement, 3-Pin TO-263 IRF3710ZSTRLPBF
- RS stock no.:
- 162-3302
- Mfr. Part No.:
- IRF3710ZSTRLPBF
- Manufacturer:
- Infineon
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Bulk discount available
View bulk pricing optionsSubtotal (1 pack of 10 units)*
R 316,03
(exc. VAT)
R 363,43
(inc. VAT)
FREE delivery for orders over R 1,500.00
Last RS stock
- 280 left, ready to ship from another location
- Final 130 unit(s) shipping from 21 September 2026
Units | Per unit | Per Pack* |
|---|---|---|
| 10 - 90 | R 31.603 | R 316.03 |
| 100 - 190 | R 30.813 | R 308.13 |
| 200 - 390 | R 29.889 | R 298.89 |
| 400 - 590 | R 28.693 | R 286.93 |
| 600 + | R 27.545 | R 275.45 |
*price indicative
- RS stock no.:
- 162-3302
- Mfr. Part No.:
- IRF3710ZSTRLPBF
- Manufacturer:
- Infineon
Specification
Technical data sheets
Legislation and Compliance
Product Details
Find similar products by selecting one or more attributes.
Select all | Attribute | Value |
|---|---|---|
| Brand | Infineon | |
| Channel Type | N | |
| Product Type | MOSFET | |
| Maximum Continuous Drain Current Id | 59A | |
| Maximum Drain Source Voltage Vds | 100V | |
| Package Type | TO-263 | |
| Series | IRF3710ZS | |
| Mount Type | Surface | |
| Pin Count | 3 | |
| Maximum Drain Source Resistance Rds | 18mΩ | |
| Channel Mode | Enhancement | |
| Forward Voltage Vf | 1.3V | |
| Maximum Gate Source Voltage Vgs | 20V | |
| Typical Gate Charge Qg @ Vgs | 82nC | |
| Minimum Operating Temperature | -55°C | |
| Maximum Power Dissipation Pd | 160W | |
| Maximum Operating Temperature | 175°C | |
| Width | 9.65mm | |
| Length | 10.67mm | |
| Height | 4.83mm | |
| Standards/Approvals | No | |
| Automotive Standard | AEC-Q101 | |
| Select all | ||
|---|---|---|
Brand Infineon | ||
Channel Type N | ||
Product Type MOSFET | ||
Maximum Continuous Drain Current Id 59A | ||
Maximum Drain Source Voltage Vds 100V | ||
Package Type TO-263 | ||
Series IRF3710ZS | ||
Mount Type Surface | ||
Pin Count 3 | ||
Maximum Drain Source Resistance Rds 18mΩ | ||
Channel Mode Enhancement | ||
Forward Voltage Vf 1.3V | ||
Maximum Gate Source Voltage Vgs 20V | ||
Typical Gate Charge Qg @ Vgs 82nC | ||
Minimum Operating Temperature -55°C | ||
Maximum Power Dissipation Pd 160W | ||
Maximum Operating Temperature 175°C | ||
Width 9.65mm | ||
Length 10.67mm | ||
Height 4.83mm | ||
Standards/Approvals No | ||
Automotive Standard AEC-Q101 | ||
This HEXFET® Power MOSFET utilizes the latest processing techniques to achieve extremely low on-resistance per silicon area. Additional features of this design are a 175°C junction operating temperature, fast switching speed and improved repetitive avalanche rating. These features combine to make this design an extremely efficient and reliable device for use in a wide variety of Applications.
Advanced Process Technology
Ultra Low On-Resistance
Dynamic dv/dt Rating
175°C Operating Temperature
Fast Switching
Repetitive Avalanche Allowed up to Tjmax
Lead-Free
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