Infineon IPD Type N-Channel MOSFET, 59 A, 100 V N, 3-Pin TO-252

Image representative of range

Bulk discount available

Subtotal (1 reel of 2500 units)*

R 29 310,00

(exc. VAT)

R 33 707,50

(inc. VAT)

Add to Basket
Select or type quantity
Temporarily out of stock
  • Shipping from 21 August 2026
Need more? Click ‘Check delivery dates’ to find extra stock and lead times.
Units
Per unit
Per Reel*
2500 - 2500R 11.724R 29,310.00
5000 - 5000R 11.431R 28,577.50
7500 +R 11.088R 27,720.00

*price indicative

RS stock no.:
258-3832
Mfr. Part No.:
IPD122N10N3GATMA1
Manufacturer:
Infineon
Find similar products by selecting one or more attributes.
Select all

Brand

Infineon

Product Type

MOSFET

Channel Type

Type N

Maximum Continuous Drain Current Id

59A

Maximum Drain Source Voltage Vds

100V

Package Type

TO-252

Series

IPD

Pin Count

3

Maximum Drain Source Resistance Rds

12.2mΩ

Channel Mode

N

Minimum Operating Temperature

-55°C

Maximum Gate Source Voltage Vgs

20 V

Forward Voltage Vf

1V

Typical Gate Charge Qg @ Vgs

26nC

Maximum Power Dissipation Pd

94W

Maximum Operating Temperature

175°C

Standards/Approvals

RoHS, IEC 61249-2-21

Automotive Standard

No

The Infineon OptiMOS power MOSFETs offer superior solutions for high efficiency, high power-density SMPS. Compared to the next best technology this family achieves a reduction of 30% in both R DS(on) and FOM.

Excellent switching performance

Less paralleling required

Smallest board-space consumption

Easy-to-design products

Related links