Infineon IPD Type N-Channel MOSFET, 59 A, 100 V N, 3-Pin TO-252

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Subtotal (1 reel of 2500 units)*

R 29 425,00

(exc. VAT)

R 33 850,00

(inc. VAT)

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  • Shipping from 08 December 2026
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Units
Per unit
Per Reel*
2500 - 2500R 11.77R 29,425.00
5000 - 5000R 11.476R 28,690.00
7500 +R 11.132R 27,830.00

*price indicative

RS stock no.:
258-3832
Mfr. Part No.:
IPD122N10N3GATMA1
Manufacturer:
Infineon
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Brand

Infineon

Product Type

MOSFET

Channel Type

Type N

Maximum Continuous Drain Current Id

59A

Maximum Drain Source Voltage Vds

100V

Series

IPD

Package Type

TO-252

Pin Count

3

Maximum Drain Source Resistance Rds

12.2mΩ

Channel Mode

N

Typical Gate Charge Qg @ Vgs

26nC

Forward Voltage Vf

1V

Maximum Power Dissipation Pd

94W

Minimum Operating Temperature

-55°C

Maximum Gate Source Voltage Vgs

20 V

Maximum Operating Temperature

175°C

Standards/Approvals

RoHS, IEC 61249-2-21

Automotive Standard

No

The Infineon OptiMOS power MOSFETs offer superior solutions for high efficiency, high power-density SMPS. Compared to the next best technology this family achieves a reduction of 30% in both R DS(on) and FOM.

Excellent switching performance

Less paralleling required

Smallest board-space consumption

Easy-to-design products

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