Infineon IPD Type N-Channel MOSFET, 59 A, 100 V N, 3-Pin TO-252 IPD122N10N3GATMA1
- RS stock no.:
- 258-3833
- Mfr. Part No.:
- IPD122N10N3GATMA1
- Manufacturer:
- Infineon
Image representative of range
Bulk discount available
View bulk pricing optionSubtotal (1 pack of 2 units)*
R 44,36
(exc. VAT)
R 51,02
(inc. VAT)
FREE delivery for orders over R 1,500.00
In Stock
- 1,262 unit(s) ready to ship from another location
Need more? Click ‘Check delivery dates’ to find extra stock and lead times.
Units | Per unit | Per Pack* |
|---|---|---|
| 2 - 8 | R 22.18 | R 44.36 |
| 10 - 98 | R 21.625 | R 43.25 |
| 100 - 248 | R 20.975 | R 41.95 |
| 250 - 498 | R 20.135 | R 40.27 |
| 500 + | R 19.33 | R 38.66 |
*price indicative
- RS stock no.:
- 258-3833
- Mfr. Part No.:
- IPD122N10N3GATMA1
- Manufacturer:
- Infineon
Specification
Technical data sheets
Legislation and Compliance
Product Details
Find similar products by selecting one or more attributes.
Select all | Attribute | Value |
|---|---|---|
| Brand | Infineon | |
| Product Type | MOSFET | |
| Channel Type | Type N | |
| Maximum Continuous Drain Current Id | 59A | |
| Maximum Drain Source Voltage Vds | 100V | |
| Series | IPD | |
| Package Type | TO-252 | |
| Pin Count | 3 | |
| Maximum Drain Source Resistance Rds | 12.2mΩ | |
| Channel Mode | N | |
| Maximum Power Dissipation Pd | 94W | |
| Forward Voltage Vf | 1V | |
| Minimum Operating Temperature | -55°C | |
| Maximum Gate Source Voltage Vgs | 20 V | |
| Typical Gate Charge Qg @ Vgs | 26nC | |
| Maximum Operating Temperature | 175°C | |
| Standards/Approvals | RoHS, IEC 61249-2-21 | |
| Automotive Standard | No | |
| Select all | ||
|---|---|---|
Brand Infineon | ||
Product Type MOSFET | ||
Channel Type Type N | ||
Maximum Continuous Drain Current Id 59A | ||
Maximum Drain Source Voltage Vds 100V | ||
Series IPD | ||
Package Type TO-252 | ||
Pin Count 3 | ||
Maximum Drain Source Resistance Rds 12.2mΩ | ||
Channel Mode N | ||
Maximum Power Dissipation Pd 94W | ||
Forward Voltage Vf 1V | ||
Minimum Operating Temperature -55°C | ||
Maximum Gate Source Voltage Vgs 20 V | ||
Typical Gate Charge Qg @ Vgs 26nC | ||
Maximum Operating Temperature 175°C | ||
Standards/Approvals RoHS, IEC 61249-2-21 | ||
Automotive Standard No | ||
The Infineon OptiMOS power MOSFETs offer superior solutions for high efficiency, high power-density SMPS. Compared to the next best technology this family achieves a reduction of 30% in both R DS(on) and FOM.
Excellent switching performance
Less paralleling required
Smallest board-space consumption
Easy-to-design products
Related links
- Infineon IPD Type N-Channel MOSFET 100 V N, 3-Pin TO-252
- DiodesZetex Type N-Channel MOSFET 100 V Enhancement, 3-Pin TO-252 DMTH10H015SK3-13
- Infineon IPD Type N-Channel MOSFET 100 V N, 3-Pin TO-252
- DiodesZetex Type N-Channel MOSFET 100 V Enhancement, 3-Pin TO-252
- Infineon IPD Type N-Channel MOSFET 100 V N, 3-Pin TO-252 IPD50N10S3L16ATMA1
- Infineon IPD Type N-Channel MOSFET 100 V N, 3-Pin TO-252 IPD95R750P7ATMA1
- ROHM RD3P06BBKH Type N-Channel MOSFET 100 V Depletion, 8-Pin TO-252 RD3P06BBKHRBTL
- Infineon IPD Type N-Channel MOSFET 75 V N, 3-Pin TO-252