DiodesZetex Type N-Channel MOSFET, 59 A, 100 V Enhancement, 3-Pin TO-252 DMTH10H015SK3-13

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Subtotal (1 pack of 10 units)*

R 260,86

(exc. VAT)

R 299,99

(inc. VAT)

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Units
Per unit
Per Pack*
10 - 40R 26.086R 260.86
50 - 90R 25.434R 254.34
100 - 240R 24.671R 246.71
250 - 990R 23.684R 236.84
1000 +R 22.737R 227.37

*price indicative

Packaging Options:
RS stock no.:
246-7561
Mfr. Part No.:
DMTH10H015SK3-13
Manufacturer:
DiodesZetex
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Brand

DiodesZetex

Channel Type

Type N

Product Type

MOSFET

Maximum Continuous Drain Current Id

59A

Maximum Drain Source Voltage Vds

100V

Package Type

TO-252

Mount Type

Surface

Pin Count

3

Maximum Drain Source Resistance Rds

0.014Ω

Channel Mode

Enhancement

Forward Voltage Vf

1.2V

Maximum Gate Source Voltage Vgs

8 V

Minimum Operating Temperature

-55°C

Maximum Power Dissipation Pd

1.73W

Maximum Operating Temperature

175°C

Standards/Approvals

No

Height

2.29mm

Width

6.1 mm

Length

6.58mm

Automotive Standard

AEC-Q101

The DiodesZetex makes an N-channel enhancement mode MOSFET, it has been designed to minimize the on-state resistance (RDS(ON)) and yet maintain superior switching performance, making it ideal for high efficiency power management applications. It is a green device and, totally Lead, halogen and Antimony free. This MOSFET comes in TO252 packaging. It offers fast switching and high efficiency. It is rated to +175°C and ideal for high ambient temperature environments. Its 100% unclamped inductive switching ensures more reliable and robust end application.

Maximum drain to source voltage is 100 V and maximum gate to source voltage is ±20 V Its low RDS(ON) helps to minimize power losses Its low Qg helps to minimizes switching losses

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