Infineon OptiMOS 5 Type N-Channel MOSFET, 59 A, 100 V, 8-Pin SO-8 ISC0804NLSATMA1

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Subtotal (1 pack of 5 units)*

R 206,14

(exc. VAT)

R 237,06

(inc. VAT)

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Units
Per unit
Per Pack*
5 - 5R 41.228R 206.14
10 - 95R 40.198R 200.99
100 - 245R 38.992R 194.96
250 - 495R 37.432R 187.16
500 +R 35.934R 179.67

*price indicative

Packaging Options:
RS stock no.:
232-6762
Mfr. Part No.:
ISC0804NLSATMA1
Manufacturer:
Infineon
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Brand

Infineon

Channel Type

Type N

Product Type

MOSFET

Maximum Continuous Drain Current Id

59A

Maximum Drain Source Voltage Vds

100V

Package Type

SO-8

Series

OptiMOS 5

Mount Type

Surface

Pin Count

8

Maximum Drain Source Resistance Rds

14.9mΩ

Typical Gate Charge Qg @ Vgs

24nC

Maximum Power Dissipation Pd

60W

Minimum Operating Temperature

-55°C

Maximum Gate Source Voltage Vgs

20 V

Maximum Operating Temperature

175°C

Width

1.2 mm

Length

6.1mm

Standards/Approvals

No

Height

5.35mm

Automotive Standard

No

The Infineon's OptiMOS PD power MOSFET 100 V, are designed targeting USB-PD and adapter applications. It's SuperSO8 package offers fast ramp-up and optimized lead times. OptiMOS low-voltage MOSFETs for power delivery enable designs with less parts leading to BOM cost reduction. OptiMOS PD features quality products in compact, lightweight packages.

Logic level availability

Excellent thermal behaviour

100% avalanche tested

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