ROHM RJ1 1 Type N-Channel MOSFET, 80 A, 100 V Enhancement, 3-Pin TO-263AB RJ1P04BBHTL1
- RS stock no.:
- 264-883
- Mfr. Part No.:
- RJ1P04BBHTL1
- Manufacturer:
- ROHM
Image representative of range
Bulk discount available
View bulk pricing optionSubtotal (1 tape of 5 units)*
R 193,94
(exc. VAT)
R 223,03
(inc. VAT)
FREE delivery for orders over R 1,500.00
In Stock
- Plus 100 unit(s) shipping from 01 June 2026
Need more? Click ‘Check delivery dates’ to find extra stock and lead times.
Units | Per unit | Per Tape* |
|---|---|---|
| 5 - 45 | R 38.788 | R 193.94 |
| 50 - 95 | R 37.818 | R 189.09 |
| 100 - 495 | R 36.684 | R 183.42 |
| 500 - 995 | R 35.216 | R 176.08 |
| 1000 + | R 33.808 | R 169.04 |
*price indicative
- RS stock no.:
- 264-883
- Mfr. Part No.:
- RJ1P04BBHTL1
- Manufacturer:
- ROHM
Specification
Technical data sheets
Legislation and Compliance
Product Details
Find similar products by selecting one or more attributes.
Select all | Attribute | Value |
|---|---|---|
| Brand | ROHM | |
| Product Type | MOSFET | |
| Channel Type | Type N | |
| Maximum Continuous Drain Current Id | 80A | |
| Maximum Drain Source Voltage Vds | 100V | |
| Series | RJ1 | |
| Package Type | TO-263AB | |
| Pin Count | 3 | |
| Maximum Drain Source Resistance Rds | 8.8mΩ | |
| Channel Mode | Enhancement | |
| Maximum Gate Source Voltage Vgs | 20 V | |
| Maximum Power Dissipation Pd | 89W | |
| Typical Gate Charge Qg @ Vgs | 38.0nC | |
| Forward Voltage Vf | 1.2V | |
| Minimum Operating Temperature | -55°C | |
| Maximum Operating Temperature | 150°C | |
| Standards/Approvals | RoHS Compliant | |
| Number of Elements per Chip | 1 | |
| Select all | ||
|---|---|---|
Brand ROHM | ||
Product Type MOSFET | ||
Channel Type Type N | ||
Maximum Continuous Drain Current Id 80A | ||
Maximum Drain Source Voltage Vds 100V | ||
Series RJ1 | ||
Package Type TO-263AB | ||
Pin Count 3 | ||
Maximum Drain Source Resistance Rds 8.8mΩ | ||
Channel Mode Enhancement | ||
Maximum Gate Source Voltage Vgs 20 V | ||
Maximum Power Dissipation Pd 89W | ||
Typical Gate Charge Qg @ Vgs 38.0nC | ||
Forward Voltage Vf 1.2V | ||
Minimum Operating Temperature -55°C | ||
Maximum Operating Temperature 150°C | ||
Standards/Approvals RoHS Compliant | ||
Number of Elements per Chip 1 | ||
The ROHM Nch 100V 80A TO-263AB power MOSFET with low on-resistance and high power small mold package, suitable for switching.
Low on-resistance
High power small mold package (TO263AB)
Pb-free plating and RoHS compliant
100% UIS tested
Related links
- ROHM RJ1 1 Type N-Channel MOSFET 150 V Enhancement, 3-Pin TO-263AB RJ1R10BBHTL1
- ROHM RJ1 1 Type N-Channel MOSFET 100 V Enhancement, 3-Pin TO-263AB RJ1P07CBHTL1
- ROHM RJ1 1 Type N-Channel MOSFET 100 V Enhancement, 3-Pin TO-263AB RJ1P10BBHTL1
- ROHM RJ1 Type N-Channel Single MOSFETs 3-Pin TO-263AB RJ1R04BBHTL1
- ROHM RJ1N04BBHT Type N-Channel Single MOSFETs 3-Pin TO-263AB-3LSHYAD RJ1N04BBHTL1
- ROHM RX3P07BBH Type N-Channel MOSFET 100 V Enhancement, 3-Pin TO-220
- ROHM RX3P07BBH Type N-Channel MOSFET 100 V Enhancement, 3-Pin TO-220 RX3P07BBHC16
- Infineon HEXFET Type N-Channel MOSFET 100 V Enhancement, 3-Pin TO-263 IRF8010STRLPBF