ROHM RJ1 1 Type N-Channel MOSFET, 120 A, 100 V Enhancement, 3-Pin TO-263AB RJ1P07CBHTL1

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Subtotal (1 tape of 2 units)*

R 111,14

(exc. VAT)

R 127,82

(inc. VAT)

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Orders below R 1 500,00 (exc. VAT) cost R 120,00.
In Stock
  • 100 unit(s) ready to ship from another location
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Units
Per unit
Per Tape*
2 - 18R 55.57R 111.14
20 - 198R 54.18R 108.36
200 - 998R 52.555R 105.11
1000 - 1998R 50.455R 100.91
2000 +R 48.435R 96.87

*price indicative

Packaging Options:
RS stock no.:
264-884
Mfr. Part No.:
RJ1P07CBHTL1
Manufacturer:
ROHM
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Brand

ROHM

Channel Type

Type N

Product Type

MOSFET

Maximum Continuous Drain Current Id

120A

Maximum Drain Source Voltage Vds

100V

Package Type

TO-263AB

Series

RJ1

Pin Count

3

Maximum Drain Source Resistance Rds

5.1mΩ

Channel Mode

Enhancement

Typical Gate Charge Qg @ Vgs

73.0nC

Maximum Gate Source Voltage Vgs

±20 V

Maximum Power Dissipation Pd

135W

Minimum Operating Temperature

-55°C

Forward Voltage Vf

1.2V

Maximum Operating Temperature

150°C

Standards/Approvals

RoHS Compliant

Number of Elements per Chip

1

The ROHM Nch 100V 120A TO-263AB power MOSFET with low on-resistance and high power small mold package, suitable for switching.

Low on-resistance

High power small mold package (TO263AB)

Pb-free plating and RoHS compliant

100% UIS tested

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