ROHM RJ1 1 Type N-Channel MOSFET, 120 A, 100 V Enhancement, 3-Pin TO-263AB RJ1P07CBHTL1

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Subtotal (1 tape of 2 units)*

R 114,27

(exc. VAT)

R 131,41

(inc. VAT)

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Units
Per unit
Per Tape*
2 - 18R 57.135R 114.27
20 - 198R 55.705R 111.41
200 - 998R 54.035R 108.07
1000 - 1998R 51.875R 103.75
2000 +R 49.80R 99.60

*price indicative

Packaging Options:
RS stock no.:
264-884
Mfr. Part No.:
RJ1P07CBHTL1
Manufacturer:
ROHM
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Brand

ROHM

Product Type

MOSFET

Channel Type

Type N

Maximum Continuous Drain Current Id

120A

Maximum Drain Source Voltage Vds

100V

Series

RJ1

Package Type

TO-263AB

Pin Count

3

Maximum Drain Source Resistance Rds

5.1mΩ

Channel Mode

Enhancement

Forward Voltage Vf

1.2V

Minimum Operating Temperature

-55°C

Typical Gate Charge Qg @ Vgs

73.0nC

Maximum Gate Source Voltage Vgs

±20 V

Maximum Power Dissipation Pd

135W

Maximum Operating Temperature

150°C

Standards/Approvals

RoHS Compliant

Number of Elements per Chip

1

The ROHM Nch 100V 120A TO-263AB power MOSFET with low on-resistance and high power small mold package, suitable for switching.

Low on-resistance

High power small mold package (TO263AB)

Pb-free plating and RoHS compliant

100% UIS tested

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