Infineon HEXFET Type N-Channel MOSFET, 80 A, 100 V Enhancement, 3-Pin TO-263 IRF8010STRLPBF
- RS stock no.:
- 130-0966
- Mfr. Part No.:
- IRF8010STRLPBF
- Manufacturer:
- Infineon
Image representative of range
Bulk discount available
Subtotal (1 pack of 5 units)*
R 238,00
(exc. VAT)
R 273,70
(inc. VAT)
FREE delivery for orders over R 1,500.00
In Stock
- Plus 615 unit(s) shipping from 29 December 2025
Need more? Click ‘Check delivery dates’ to find extra stock and lead times.
Units | Per unit | Per Pack* |
|---|---|---|
| 5 - 45 | R 47.60 | R 238.00 |
| 50 - 95 | R 46.41 | R 232.05 |
| 100 - 495 | R 45.018 | R 225.09 |
| 500 - 995 | R 43.218 | R 216.09 |
| 1000 + | R 41.49 | R 207.45 |
*price indicative
- RS stock no.:
- 130-0966
- Mfr. Part No.:
- IRF8010STRLPBF
- Manufacturer:
- Infineon
Specification
Technical data sheets
Legislation and Compliance
Product Details
Find similar products by selecting one or more attributes.
Select all | Attribute | Value |
|---|---|---|
| Brand | Infineon | |
| Channel Type | Type N | |
| Product Type | MOSFET | |
| Maximum Continuous Drain Current Id | 80A | |
| Maximum Drain Source Voltage Vds | 100V | |
| Series | HEXFET | |
| Package Type | TO-263 | |
| Mount Type | Surface | |
| Pin Count | 3 | |
| Maximum Drain Source Resistance Rds | 15mΩ | |
| Channel Mode | Enhancement | |
| Maximum Power Dissipation Pd | 260W | |
| Typical Gate Charge Qg @ Vgs | 81nC | |
| Minimum Operating Temperature | -55°C | |
| Maximum Gate Source Voltage Vgs | 20 V | |
| Forward Voltage Vf | 1.3V | |
| Maximum Operating Temperature | 175°C | |
| Height | 4.83mm | |
| Length | 10.67mm | |
| Standards/Approvals | No | |
| Width | 9.65 mm | |
| Distrelec Product Id | 304-36-988 | |
| Automotive Standard | No | |
| Select all | ||
|---|---|---|
Brand Infineon | ||
Channel Type Type N | ||
Product Type MOSFET | ||
Maximum Continuous Drain Current Id 80A | ||
Maximum Drain Source Voltage Vds 100V | ||
Series HEXFET | ||
Package Type TO-263 | ||
Mount Type Surface | ||
Pin Count 3 | ||
Maximum Drain Source Resistance Rds 15mΩ | ||
Channel Mode Enhancement | ||
Maximum Power Dissipation Pd 260W | ||
Typical Gate Charge Qg @ Vgs 81nC | ||
Minimum Operating Temperature -55°C | ||
Maximum Gate Source Voltage Vgs 20 V | ||
Forward Voltage Vf 1.3V | ||
Maximum Operating Temperature 175°C | ||
Height 4.83mm | ||
Length 10.67mm | ||
Standards/Approvals No | ||
Width 9.65 mm | ||
Distrelec Product Id 304-36-988 | ||
Automotive Standard No | ||
N-Channel Power MOSFET 100V, Infineon
The Infineon range of discrete HEXFET® power MOSFETs includes N-channel devices in surface mount and leaded packages. And form factors that can address almost any board layout and thermal design challenge. Across the range Benchmark on resistance drives down conduction losses, allowing designers to deliver optimum system efficiency.
MOSFET Transistors, Infineon
Infineon offers a large and comprehensive portfolio of MOSFET devices which includes the CoolMOS, OptiMOS and StrongIRFET families. They deliver best-in-class performance to bring more efficiency, power density and cost effectiveness. Designs requiring high quality and enhanced protection features benefit from AEC-Q101 industry standards Automotive qualified MOSFETs.
Related links
- Infineon HEXFET N-Channel MOSFET 100 V, 3-Pin D2PAK IRF8010STRLPBF
- Infineon HEXFET N-Channel MOSFET 100 V TO-220AB IRF8010PBF
- Infineon HEXFET N-Channel MOSFET 75 V, 3-Pin IPAK IRFU3607PBF
- Infineon OptiMOS™ 3 N-Channel MOSFET 100 V, 3-Pin D2PAK IPB083N10N3GATMA1
- Infineon HEXFET N-Channel MOSFET 75 V, 3-Pin TO-220AB IRFB3607PBF
- STMicroelectronics STripFET H7 N-Channel MOSFET 100 V, 3-Pin D2PAK STB100N10F7
- ROHM RJ1 N-Channel MOSFET 100 V, 3-Pin D2PAK RJ1P04BBHTL1
- STMicroelectronics STripFET II N-Channel MOSFET 100 V, 3-Pin D2PAK STB80NF10T4
