N-Channel MOSFET, 80 A, 100 V, 3-Pin D2PAK Infineon IRF8010STRLPBF

RS stock no.:: 130-0966
Mfr. Part No.:: IRF8010STRLPBF
Manufacturer:: Infineon

N-Channel MOSFET, 80 A, 100 V, 3-Pin D2PAK Infineon IRF8010STRLPBF

Image representative of range

Bulk discount available

Price (Excl VAT) Each (In a Pack of 5)

R 19,438

(exc. VAT)

R 22,354

(inc. VAT)

675 Available from UK/Europe in 4–6 working days for collection or delivery to major cities (Heavy, hazardous or lithium product excluded. Delivery T&C's apply)*

* Delivery dates may change based on your chosen quantity and delivery address.

Not Available for premium delivery

Units	Per unit	Per Pack**
5 - 45	R 19,438	R 97,19
50 - 95	R 18,952	R 94,76
100 - 495	R 18,384	R 91,92
500 - 995	R 17,648	R 88,24
1000 +	R 16,942	R 84,71

**price indicative

RS stock no.:: 130-0966
Mfr. Part No.:: IRF8010STRLPBF
Manufacturer:: Infineon

IRF8010SPbF, IRF8010LPbF, HEXFET Power MOSFET 100V
ESD Control Selection Guide V1

Attribute	Value
Channel Type	N
Maximum Continuous Drain Current	80 A
Maximum Drain Source Voltage	100 V
Series	HEXFET
Package Type	D2PAK (TO-263)
Mounting Type	Surface Mount
Pin Count	3
Maximum Drain Source Resistance	15 mΩ
Channel Mode	Enhancement
Maximum Gate Threshold Voltage	4V
Minimum Gate Threshold Voltage	2V
Maximum Power Dissipation	260 W
Maximum Gate Source Voltage	-20 V, +20 V
Number of Elements per Chip	1
Width	9.65mm
Typical Gate Charge @ Vgs	81 nC @ 10 V
Length	10.67mm
Maximum Operating Temperature	+175 °C
Forward Diode Voltage	1.3V
Height	4.83mm
Minimum Operating Temperature	-55 °C

N-Channel MOSFET, 80 A, 100 V, 3-Pin D2PAK Infineon IRF8010STRLPBF

N-Channel Power MOSFET 100V, Infineon

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