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ROHM RJ1 Type N-Channel Single MOSFETs, 150 V Enhancement, 3-Pin TO-263AB RJ1R04BBHTL1

RS stock no.:: 646-551
Mfr. Part No.:: RJ1R04BBHTL1
Manufacturer:: ROHM

ROHM RJ1 Type N-Channel Single MOSFETs, 150 V Enhancement, 3-Pin TO-263AB RJ1R04BBHTL1

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Bulk discount available

Subtotal (1 tape of 2 units)*

R 74,65

(exc. VAT)

R 85,848

(inc. VAT)

FREE delivery for orders over R 1,500.00

In Stock

100 unit(s) ready to ship from another location

Need more? Click ‘Check delivery dates’ to find extra stock and lead times.

Units	Per unit	Per Tape*
2 - 18	R 37.325	R 74.65
20 - 98	R 36.39	R 72.78
100 - 198	R 35.30	R 70.60
200 +	R 33.89	R 67.78

*price indicative

RS stock no.:: 646-551
Mfr. Part No.:: RJ1R04BBHTL1
Manufacturer:: ROHM

Specification

Technical data sheets

Legislation and Compliance

Product Details

Find similar products by selecting one or more attributes.

Select all	Attribute	Value
	Brand	ROHM
	Channel Type	Type N
	Product Type	Single MOSFETs
	Maximum Drain Source Voltage Vds	150V
	Series	RJ1
	Package Type	TO-263AB
	Mount Type	Surface
	Pin Count	3
	Maximum Drain Source Resistance Rds	27mΩ
	Channel Mode	Enhancement
	Typical Gate Charge Qg @ Vgs	37nC
	Maximum Gate Source Voltage Vgs	±20 V
	Minimum Operating Temperature	-55°C
	Maximum Power Dissipation Pd	89W
	Maximum Operating Temperature	150°C
	Height	4.77mm
	Length	15.5mm
	Width	10.36 mm
	Standards/Approvals	RoHS
	Automotive Standard	No

	Select all
	Brand ROHM
	Channel Type Type N
	Product Type Single MOSFETs
	Maximum Drain Source Voltage Vds 150V
	Series RJ1
	Package Type TO-263AB
	Mount Type Surface
	Pin Count 3
	Maximum Drain Source Resistance Rds 27mΩ
	Channel Mode Enhancement
	Typical Gate Charge Qg @ Vgs 37nC
	Maximum Gate Source Voltage Vgs ±20 V
	Minimum Operating Temperature -55°C
	Maximum Power Dissipation Pd 89W
	Maximum Operating Temperature 150°C
	Height 4.77mm
	Length 15.5mm
	Width 10.36 mm
	Standards/Approvals RoHS
	Automotive Standard No

Datasheet - RJ1R04BBHTL1

The ROHM N channel 150 volt 40 ampere power metal oxide semiconductor field effect transistor features low on resistance, a high power package type TO two six three AB, lead free plating, and is restriction of hazardous substances compliant.

Halogen free

100% Rg and UIS tested

ROHM RJ1 Type N-Channel Single MOSFETs, 150 V Enhancement, 3-Pin TO-263AB RJ1R04BBHTL1

FREE delivery for orders over R 1,500.00

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