ROHM RJ1N04BBHT Type N-Channel Single MOSFETs, 80 V Enhancement, 3-Pin TO-263AB-3LSHYAD RJ1N04BBHTL1

RS stock no.:: 687-400
Mfr. Part No.:: RJ1N04BBHTL1
Manufacturer:: ROHM

ROHM RJ1N04BBHT Type N-Channel Single MOSFETs, 80 V Enhancement, 3-Pin TO-263AB-3LSHYAD RJ1N04BBHTL1

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Bulk discount available

Subtotal (1 tape of 2 units)*

R 93,18

(exc. VAT)

R 107,16

(inc. VAT)

FREE delivery for orders over R 1,500.00

Temporarily out of stock

Shipping from 20 January 2026

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Units	Per unit	Per Tape*
2 - 18	R 46.59	R 93.18
20 - 98	R 45.425	R 90.85
100 - 198	R 44.06	R 88.12
200 +	R 42.30	R 84.60

*price indicative

RS stock no.:: 687-400
Mfr. Part No.:: RJ1N04BBHTL1
Manufacturer:: ROHM

Specification

Technical data sheets

Legislation and Compliance

Product Details

Find similar products by selecting one or more attributes.

Select all	Attribute	Value
	Brand	ROHM
	Channel Type	Type N
	Product Type	Single MOSFETs
	Maximum Drain Source Voltage Vds	80V
	Package Type	TO-263AB-3LSHYAD
	Series	RJ1N04BBHT
	Mount Type	Surface
	Pin Count	3
	Maximum Drain Source Resistance Rds	5.3mΩ
	Channel Mode	Enhancement
	Maximum Power Dissipation Pd	89W
	Maximum Gate Source Voltage Vgs	±20 V
	Minimum Operating Temperature	-55°C
	Typical Gate Charge Qg @ Vgs	46nC
	Maximum Operating Temperature	150°C
	Height	4.77mm
	Width	10.36 mm
	Length	15.5mm
	Standards/Approvals	RoHS
	Automotive Standard	No

	Select all
	Brand ROHM
	Channel Type Type N
	Product Type Single MOSFETs
	Maximum Drain Source Voltage Vds 80V
	Package Type TO-263AB-3LSHYAD
	Series RJ1N04BBHT
	Mount Type Surface
	Pin Count 3
	Maximum Drain Source Resistance Rds 5.3mΩ
	Channel Mode Enhancement
	Maximum Power Dissipation Pd 89W
	Maximum Gate Source Voltage Vgs ±20 V
	Minimum Operating Temperature -55°C
	Typical Gate Charge Qg @ Vgs 46nC
	Maximum Operating Temperature 150°C
	Height 4.77mm
	Width 10.36 mm
	Length 15.5mm
	Standards/Approvals RoHS
	Automotive Standard No

Datasheet - RJ1N04BBHTL1

COO (Country of Origin):: JP

The ROHM N channel power MOSFET designed to deliver outstanding efficiency in demanding applications. With a maximal drain-source voltage of 80V and a continuous drain current of 100A, it is tailored for effective switching tasks in a variety of circuits, making it ideal for motor drives and DC/DC converters. Its low on-resistance of 5.3mΩ ensures that energy loss is minimised, resulting in better thermal management and reliable operation under high-power conditions. Compliant with RoHS standards, this device not only meets environmental requirements but also assures high reliability and safety for end-users in diverse electronics.

Low on resistance for effective power management and reduced thermal load

Capable of handling continuous drain currents of ±100A, ideal for high-performance designs

Comprehensive testing for robustness, including 100% Rg and UIS testing

Pb free plating ensures compliance with international environmental standards

Halogen-free construction contributes to environmental sustainability

Robust packaging specifications, including embossed tape for dependable transport and storage

Operating temperature range from -55 to +150°C provides operational flexibility across diverse environments

ROHM RJ1N04BBHT Type N-Channel Single MOSFETs, 80 V Enhancement, 3-Pin TO-263AB-3LSHYAD RJ1N04BBHTL1

FREE delivery for orders over R 1,500.00

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