ROHM RX3P07BBH Type N-Channel MOSFET, 80 A, 100 V Enhancement, 3-Pin TO-220 RX3P07BBHC16
- RS stock no.:
- 266-3868
- Mfr. Part No.:
- RX3P07BBHC16
- Manufacturer:
- ROHM
Image representative of range
Bulk discount available
Subtotal (1 pack of 2 units)*
R 141,17
(exc. VAT)
R 162,346
(inc. VAT)
FREE delivery for orders over R 1,500.00
Temporarily out of stock
- 994 left, ready to ship from another location
Need more? Click ‘Check delivery dates’ to find extra stock and lead times.
Units | Per unit | Per Pack* |
|---|---|---|
| 2 - 48 | R 70.585 | R 141.17 |
| 50 - 98 | R 68.82 | R 137.64 |
| 100 - 248 | R 66.755 | R 133.51 |
| 250 - 498 | R 64.085 | R 128.17 |
| 500 + | R 61.52 | R 123.04 |
*price indicative
- RS stock no.:
- 266-3868
- Mfr. Part No.:
- RX3P07BBHC16
- Manufacturer:
- ROHM
Specification
Technical data sheets
Legislation and Compliance
Product Details
Find similar products by selecting one or more attributes.
Select all | Attribute | Value |
|---|---|---|
| Brand | ROHM | |
| Product Type | MOSFET | |
| Channel Type | Type N | |
| Maximum Continuous Drain Current Id | 80A | |
| Maximum Drain Source Voltage Vds | 100V | |
| Package Type | TO-220 | |
| Series | RX3P07BBH | |
| Mount Type | Surface | |
| Pin Count | 3 | |
| Maximum Drain Source Resistance Rds | 8.4mΩ | |
| Channel Mode | Enhancement | |
| Typical Gate Charge Qg @ Vgs | 38nC | |
| Maximum Gate Source Voltage Vgs | 20 V | |
| Maximum Power Dissipation Pd | 89W | |
| Minimum Operating Temperature | -55°C | |
| Forward Voltage Vf | 1.2V | |
| Maximum Operating Temperature | 150°C | |
| Standards/Approvals | RoHS | |
| Automotive Standard | No | |
| Select all | ||
|---|---|---|
Brand ROHM | ||
Product Type MOSFET | ||
Channel Type Type N | ||
Maximum Continuous Drain Current Id 80A | ||
Maximum Drain Source Voltage Vds 100V | ||
Package Type TO-220 | ||
Series RX3P07BBH | ||
Mount Type Surface | ||
Pin Count 3 | ||
Maximum Drain Source Resistance Rds 8.4mΩ | ||
Channel Mode Enhancement | ||
Typical Gate Charge Qg @ Vgs 38nC | ||
Maximum Gate Source Voltage Vgs 20 V | ||
Maximum Power Dissipation Pd 89W | ||
Minimum Operating Temperature -55°C | ||
Forward Voltage Vf 1.2V | ||
Maximum Operating Temperature 150°C | ||
Standards/Approvals RoHS | ||
Automotive Standard No | ||
The ROHM power MOSFET with low-on resistance and high power small mould package, suitable for switching.
Pb free plating
RoHS compliant
Halogen free
Related links
- ROHM N-Channel MOSFET 100 V, 3-Pin TO-220AB RX3P07BBHC16
- Infineon HEXFET N-Channel MOSFET 100 V TO-220AB IRF8010PBF
- ROHM AG194FPD3HRB N-Channel MOSFET 100 V, 3-Pin DPAK AG194FPD3HRBTL
- ROHM RJ1 N-Channel MOSFET 100 V, 3-Pin D2PAK RJ1P04BBHTL1
- Infineon OptiMOS™ 3 N-Channel MOSFET 100 V, 3-Pin D2PAK IPB083N10N3GATMA1
- Infineon OptiMOS™ 3 N-Channel MOSFET 100 V, 3-Pin I2PAK IPI086N10N3GXKSA1
- Infineon HEXFET N-Channel MOSFET 100 V, 3-Pin D2PAK IRF8010STRLPBF
- STMicroelectronics STripFET H7 N-Channel MOSFET 100 V, 3-Pin DPAK STD100N10F7
