onsemi NXH100B120H3Q0SG IGBT Module, 61 A 1200 V Case 180AJ (Pb-Free and Halide-Free) Solder Pins

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Subtotal (1 unit)*

R 929,81

(exc. VAT)

R 1 069,28

(inc. VAT)

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1 - 1R 929.81
2 - 3R 906.56
4 - 7R 879.36
8 - 11R 844.19
12 +R 810.42

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Packaging Options:
RS stock no.:
245-6964
Mfr. Part No.:
NXH100B120H3Q0SG
Manufacturer:
onsemi
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Brand

onsemi

Maximum Continuous Collector Current

61 A

Maximum Collector Emitter Voltage

1200 V

Maximum Gate Emitter Voltage

±20V

Number of Transistors

2

Maximum Power Dissipation

186 W

Package Type

Case 180AJ (Pb-Free and Halide-Free) Solder Pins

The ON Semiconductor Dual Boost Power Module is a power module containing a dual boost stage. The integrated field stop trench IGBTs and SiC Diodes provide lower conduction losses and switching losses, enabling designers to achieve high efficiency and superior reliability.

1200 V Ultra Field Stop IGBTs
Low Reverse Recovery and Fast Switching SiC Diodes
1600 V Bypass and Anti parallel Diodes
Low Inductive Layout
Solderable Pins or Press Fit Pins
Thermistor options with pre applied thermal interface material and without pre applied TIM

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