onsemi NXH100B120H3Q0PG IGBT Module, 61 A 1200 V Case 180BF (Pb-Free and Halide-Free) Press-Fit Pins

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Subtotal (1 unit)*

R 904,33

(exc. VAT)

R 1 039,98

(inc. VAT)

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1 - 1R 904.33
2 - 3R 881.72
4 - 7R 855.27
8 - 11R 821.06
12 +R 788.22

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Packaging Options:
RS stock no.:
245-6962
Mfr. Part No.:
NXH100B120H3Q0PG
Manufacturer:
onsemi
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Brand

onsemi

Maximum Continuous Collector Current

61 A

Maximum Collector Emitter Voltage

1200 V

Maximum Gate Emitter Voltage

±20V

Number of Transistors

2

Maximum Power Dissipation

186 W

Package Type

Case 180BF (Pb-Free and Halide-Free) Press-Fit Pins

The ON Semiconductor Dual Boost Power Module is a power module containing a dual boost stage. The integrated field stop trench IGBTs and SiC Diodes provide lower conduction losses and switching losses, enabling designers to achieve high efficiency and superior reliability.

1200 V Ultra Field Stop IGBTs
Low Reverse Recovery and Fast Switching SiC Diodes
1600 V Bypass and Anti parallel Diodes
Low Inductive Layout
Solderable Pins or Press Fit Pins
Thermistor options with Pre applied thermal interface Material and without pre applied TIM

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