onsemi NXH80B120MNQ0SNG IGBT Module Q0BOOST - Case 180AJ (Pb-Free and Halide-Free Solder Pins)

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Bulk discount available

Subtotal (1 tray of 24 units)*

R 38 932,92

(exc. VAT)

R 44 772,864

(inc. VAT)

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Units
Per unit
Per Tray*
24 - 24R 1,622.205R 38,932.92
48 - 48R 1,581.65R 37,959.60
72 +R 1,534.20R 36,820.80

*price indicative

RS stock no.:
245-6990
Mfr. Part No.:
NXH80B120MNQ0SNG
Manufacturer:
onsemi
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Brand

onsemi

Number of Transistors

2

Maximum Power Dissipation

69 W

Package Type

Q0BOOST - Case 180AJ (Pb-Free and Halide-Free Solder Pins)

Full SiC MOSFET Module | EliteSiC Two Channel Full SiC Boost, 1200 V, 80 mohm SiC MOSFET + 1200 V, 20 A SiC Diode Nickel-plated DBC


The ON Semiconductor Dual Boost Power Module is a power module containing a dual boost stage. The integrated SiC MOSFETs and SiC Diodes provide lower conduction losses and switching losses, enabling designers to achieve high efficiency and superior reliability.

1200 V 80 m SiC MOSFETs
Low Reverse Recovery and Fast Switching SiC Diodes
1600 V Bypass and anti parallel Diodes
Low Inductive Layout Solderable Pins Thermistor
These devices are Pb free, Halogen Free/BFR Free and are RoHS compliant

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