onsemi NXH40B120MNQ0SNG IGBT Module Q0PACK - Case 180AJ (Pb-Free and Halide-Free Solder Pins)
- RS stock no.:
- 245-6981
- Mfr. Part No.:
- NXH40B120MNQ0SNG
- Manufacturer:
- onsemi
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Bulk discount available
Subtotal (1 tray of 24 units)*
R 37 175,184
(exc. VAT)
R 42 751,464
(inc. VAT)
FREE delivery for orders over R 1,500.00
Temporarily out of stock
- Shipping from 19 June 2026
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Units | Per unit | Per Tray* |
|---|---|---|
| 24 - 24 | R 1,548.966 | R 37,175.18 |
| 48 - 48 | R 1,510.242 | R 36,245.81 |
| 72 + | R 1,464.935 | R 35,158.44 |
*price indicative
- RS stock no.:
- 245-6981
- Mfr. Part No.:
- NXH40B120MNQ0SNG
- Manufacturer:
- onsemi
Specification
Technical data sheets
Legislation and Compliance
Product Details
Find similar products by selecting one or more attributes.
Select all | Attribute | Value |
|---|---|---|
| Brand | onsemi | |
| Number of Transistors | 2 | |
| Maximum Power Dissipation | 118 W | |
| Package Type | Q0PACK - Case 180AJ (Pb-Free and Halide-Free Solder Pins) | |
| Select all | ||
|---|---|---|
Brand onsemi | ||
Number of Transistors 2 | ||
Maximum Power Dissipation 118 W | ||
Package Type Q0PACK - Case 180AJ (Pb-Free and Halide-Free Solder Pins) | ||
Full SiC MOSFET Module | EliteSiC Two Channel Full SiC Boost, 1200 V, 40 mohm SiC MOSFET + 1200 V, 40 A SiC Diode Nickel Plated DBC
The ON Semiconductor 3 Channel Boost Q1 Power Module is a power module containing a dual boost stage. The integrated SiC MOSFETs and SiC Diodes provide lower conduction losses and switching losses, enabling designers to achieve high efficiency and superior reliability.
1200 V 40 m SiC MOSFETs
Low Reverse Recovery and Fast Switching SiC Diodes
1200 V Bypass and Anti parallel Diodes
Low Inductive Layout Solderable Pins Thermistor
This Device is Pb Free, Halogen Free/BFR Free and is RoHS Compliant
Low Reverse Recovery and Fast Switching SiC Diodes
1200 V Bypass and Anti parallel Diodes
Low Inductive Layout Solderable Pins Thermistor
This Device is Pb Free, Halogen Free/BFR Free and is RoHS Compliant
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