onsemi NXH80B120MNQ0SNG IGBT Module Q0BOOST - Case 180AJ (Pb-Free and Halide-Free Solder Pins)
- RS stock no.:
- 245-6991
- Mfr. Part No.:
- NXH80B120MNQ0SNG
- Manufacturer:
- onsemi
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Subtotal (1 unit)*
R 965,40
(exc. VAT)
R 1 110,21
(inc. VAT)
FREE delivery for orders over R 1,500.00
In Stock
- 18 unit(s) ready to ship from another location
Need more? Click ‘Check delivery dates’ to find extra stock and lead times.
Units | Per unit |
|---|---|
| 1 - 1 | R 965.40 |
| 2 - 3 | R 941.27 |
| 4 - 7 | R 913.03 |
| 8 - 11 | R 876.51 |
| 12 + | R 841.45 |
*price indicative
- RS stock no.:
- 245-6991
- Mfr. Part No.:
- NXH80B120MNQ0SNG
- Manufacturer:
- onsemi
Specification
Technical data sheets
Legislation and Compliance
Product Details
Find similar products by selecting one or more attributes.
Select all | Attribute | Value |
|---|---|---|
| Brand | onsemi | |
| Maximum Power Dissipation | 69 W | |
| Number of Transistors | 2 | |
| Package Type | Q0BOOST - Case 180AJ (Pb-Free and Halide-Free Solder Pins) | |
| Select all | ||
|---|---|---|
Brand onsemi | ||
Maximum Power Dissipation 69 W | ||
Number of Transistors 2 | ||
Package Type Q0BOOST - Case 180AJ (Pb-Free and Halide-Free Solder Pins) | ||
Full SiC MOSFET Module | EliteSiC Two Channel Full SiC Boost, 1200 V, 80 mohm SiC MOSFET + 1200 V, 20 A SiC Diode Nickel-plated DBC
The ON Semiconductor Dual Boost Power Module is a power module containing a dual boost stage. The integrated SiC MOSFETs and SiC Diodes provide lower conduction losses and switching losses, enabling designers to achieve high efficiency and superior reliability.
1200 V 80 m SiC MOSFETs
Low Reverse Recovery and Fast Switching SiC Diodes
1600 V Bypass and anti parallel Diodes
Low Inductive Layout Solderable Pins Thermistor
These devices are Pb free, Halogen Free/BFR Free and are RoHS compliant
Low Reverse Recovery and Fast Switching SiC Diodes
1600 V Bypass and anti parallel Diodes
Low Inductive Layout Solderable Pins Thermistor
These devices are Pb free, Halogen Free/BFR Free and are RoHS compliant
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