onsemi NXH80B120MNQ0SNG IGBT Module Q0BOOST - Case 180AJ (Pb-Free and Halide-Free Solder Pins)

Image representative of range

Bulk discount available

Subtotal (1 unit)*

R 1 239,87

(exc. VAT)

R 1 425,85

(inc. VAT)

Add to Basket
Select or type quantity
In Stock
  • Plus 18 unit(s) shipping from 05 January 2026
Need more? Click ‘Check delivery dates’ to find extra stock and lead times.
Units
Per unit
1 - 1R 1,239.87
2 - 3R 1,208.87
4 - 7R 1,172.60
8 - 11R 1,125.70
12 +R 1,080.67

*price indicative

Packaging Options:
RS stock no.:
245-6991
Mfr. Part No.:
NXH80B120MNQ0SNG
Manufacturer:
onsemi
Find similar products by selecting one or more attributes.
Select all

Brand

onsemi

Number of Transistors

2

Maximum Power Dissipation

69 W

Package Type

Q0BOOST - Case 180AJ (Pb-Free and Halide-Free Solder Pins)

Full SiC MOSFET Module | EliteSiC Two Channel Full SiC Boost, 1200 V, 80 mohm SiC MOSFET + 1200 V, 20 A SiC Diode Nickel-plated DBC


The ON Semiconductor Dual Boost Power Module is a power module containing a dual boost stage. The integrated SiC MOSFETs and SiC Diodes provide lower conduction losses and switching losses, enabling designers to achieve high efficiency and superior reliability.

1200 V 80 m SiC MOSFETs
Low Reverse Recovery and Fast Switching SiC Diodes
1600 V Bypass and anti parallel Diodes
Low Inductive Layout Solderable Pins Thermistor
These devices are Pb free, Halogen Free/BFR Free and are RoHS compliant

Related links