Infineon FP25R12W2T4BOMA1 IGBT Module, 39 A 1200 V
- RS stock no.:
- 244-5392
- Mfr. Part No.:
- FP25R12W2T4BOMA1
- Manufacturer:
- Infineon
Bulk discount available
Subtotal (1 tray of 15 units)*
R 9 752,25
(exc. VAT)
R 11 215,05
(inc. VAT)
Add 15 units to get free delivery
Temporarily out of stock
- Shipping from 01 June 2026
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Units | Per unit | Per Tray* |
|---|---|---|
| 15 - 15 | R 650.15 | R 9,752.25 |
| 30 - 30 | R 633.896 | R 9,508.44 |
| 45 + | R 614.879 | R 9,223.19 |
*price indicative
- RS stock no.:
- 244-5392
- Mfr. Part No.:
- FP25R12W2T4BOMA1
- Manufacturer:
- Infineon
Specification
Technical data sheets
Legislation and Compliance
Product Details
Find similar products by selecting one or more attributes.
Select all | Attribute | Value |
|---|---|---|
| Brand | Infineon | |
| Maximum Continuous Collector Current | 39 A | |
| Maximum Collector Emitter Voltage | 1200 V | |
| Maximum Gate Emitter Voltage | +/-20V | |
| Maximum Power Dissipation | 175 W | |
| Number of Transistors | 7 | |
| Select all | ||
|---|---|---|
Brand Infineon | ||
Maximum Continuous Collector Current 39 A | ||
Maximum Collector Emitter Voltage 1200 V | ||
Maximum Gate Emitter Voltage +/-20V | ||
Maximum Power Dissipation 175 W | ||
Number of Transistors 7 | ||
The infineon IGBT module the maximum rated repetitive peak collector current is 50 A and maximum collector-emitter saturation voltag 2.25 V, gate threshold voltage is 6.4 V.
Collector-emitter cut-off current 1.0 mA
Temperature under switching conditions 150° C
Gate-emitter leakage current 400 nA
Reverse transfer capacitance 0.05 nF
Temperature under switching conditions 150° C
Gate-emitter leakage current 400 nA
Reverse transfer capacitance 0.05 nF
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