Infineon FP100R12KT4BOSA1 IGBT Module, 100 A 1200 V

Bulk discount available

Subtotal (1 tray of 10 units)*

R 34 043,45

(exc. VAT)

R 39 149,97

(inc. VAT)

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Units
Per unit
Per Tray*
10 - 10R 3,404.345R 34,043.45
20 - 20R 3,319.236R 33,192.36
30 +R 3,219.659R 32,196.59

*price indicative

RS stock no.:
244-5379
Mfr. Part No.:
FP100R12KT4BOSA1
Manufacturer:
Infineon
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Brand

Infineon

Maximum Continuous Collector Current

100 A

Maximum Collector Emitter Voltage

1200 V

Maximum Gate Emitter Voltage

+/-20V

Maximum Power Dissipation

515 W

Number of Transistors

7

The infineon IGBT module the maximum rated repetitive peak collector current is 200 A and collector-emitter saturation voltag 2.20 V, gate threshold voltage is 6.4 V.

Collector-emitter cut-off current 1.0 mA
Temperature under switching conditions 150° C
Gate-emitter leakage current 100 nA
Reverse transfer capacitance 0.27 nF

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