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Infineon FP100R12KT4BOSA1 IGBT Module, 100 A 1200 V

RS stock no.:: 244-5379
Mfr. Part No.:: FP100R12KT4BOSA1
Manufacturer:: Infineon

Infineon FP100R12KT4BOSA1 IGBT Module, 100 A 1200 V

Bulk discount available

Subtotal (1 tray of 10 units)*

R 33 121,30

(exc. VAT)

R 38 089,50

(inc. VAT)

Add 10 units to get free delivery

Orders below R 1 500,00 (exc. VAT) cost R 120,00.

Temporarily out of stock

Shipping from 11 May 2026

Need more? Click ‘Check delivery dates’ to find extra stock and lead times.

Units	Per unit	Per Tray*
10 - 10	R 3,312.13	R 33,121.30
20 - 20	R 3,229.327	R 32,293.27
30 +	R 3,132.447	R 31,324.47

*price indicative

RS stock no.:: 244-5379
Mfr. Part No.:: FP100R12KT4BOSA1
Manufacturer:: Infineon

Specification

Technical data sheets

Legislation and Compliance

Product Details

Find similar products by selecting one or more attributes.

Select all	Attribute	Value
	Brand	Infineon
	Maximum Continuous Collector Current	100 A
	Maximum Collector Emitter Voltage	1200 V
	Maximum Gate Emitter Voltage	+/-20V
	Number of Transistors	7
	Maximum Power Dissipation	515 W

	Select all
	Brand Infineon
	Maximum Continuous Collector Current 100 A
	Maximum Collector Emitter Voltage 1200 V
	Maximum Gate Emitter Voltage +/-20V
	Number of Transistors 7
	Maximum Power Dissipation 515 W

Datasheet - FP100R12KT4BOSA1

The infineon IGBT module the maximum rated repetitive peak collector current is 200 A and collector-emitter saturation voltag 2.20 V, gate threshold voltage is 6.4 V.

Collector-emitter cut-off current 1.0 mA
Temperature under switching conditions 150° C
Gate-emitter leakage current 100 nA
Reverse transfer capacitance 0.27 nF

Infineon FP100R12KT4BOSA1 IGBT Module, 100 A 1200 V

Add 10 units to get free delivery

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