Infineon FP100R12KT4B11BOSA1 IGBT Module, 100 A 1200 V
- RS stock no.:
- 244-5377
- Mfr. Part No.:
- FP100R12KT4B11BOSA1
- Manufacturer:
- Infineon
Bulk discount available
Subtotal (1 unit)**
R 4 109 95
(exc. VAT)
R 4 726 44
(inc. VAT)
6 Available from UK/Europe in 4–6 working days for collection or delivery to major cities (Heavy, hazardous or lithium product excluded. Delivery T&C's apply)*
* Delivery dates may change based on your chosen quantity and delivery address.
FREE delivery for orders over R 1500
Not Available for premium delivery
Units | Per unit |
|---|---|
| 1 - 1 | R 4 109,95 |
| 2 - 2 | R 4 007,20 |
| 3 - 3 | R 3 886,98 |
| 4 - 4 | R 3 731,50 |
| 5 + | R 3 582,24 |
**price indicative
- RS stock no.:
- 244-5377
- Mfr. Part No.:
- FP100R12KT4B11BOSA1
- Manufacturer:
- Infineon
Find similar products by selecting one or more attributes.
Select all | Attribute | Value |
|---|---|---|
| Manufacturer | Infineon | |
| Maximum Continuous Collector Current | 100 A | |
| Maximum Collector Emitter Voltage | 1200 V | |
| Maximum Gate Emitter Voltage | +/-20V | |
| Number of Transistors | 7 | |
| Maximum Power Dissipation | 515 W | |
Select all | ||
|---|---|---|
Manufacturer Infineon | ||
Maximum Continuous Collector Current 100 A | ||
Maximum Collector Emitter Voltage 1200 V | ||
Maximum Gate Emitter Voltage +/-20V | ||
Number of Transistors 7 | ||
Maximum Power Dissipation 515 W | ||
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