Infineon FP100R12KT4B11BOSA1 IGBT Module 1200 V

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Subtotal (1 unit)*

R 3 989,41

(exc. VAT)

R 4 587,82

(inc. VAT)

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Units
Per unit
1 - 1R 3,989.41
2 - 2R 3,889.67
3 - 3R 3,772.98
4 - 4R 3,622.06
5 +R 3,477.18

*price indicative

Packaging Options:
RS stock no.:
244-5377
Mfr. Part No.:
FP100R12KT4B11BOSA1
Manufacturer:
Infineon
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Brand

Infineon

Product Type

IGBT Module

Maximum Collector Emitter Voltage Vceo

1200V

Maximum Power Dissipation Pd

515W

Number of Transistors

7

Minimum Operating Temperature

-40°C

Maximum Gate Emitter Voltage VGEO

20 V

Maximum Collector Emitter Saturation Voltage VceSAT

2.1V

Maximum Operating Temperature

150°C

Standards/Approvals

RoHS

Series

FP100R12KT4B11

Length

122mm

Height

17mm

Width

62 mm

Automotive Standard

No

The infineon IGBT module is suitable for auxiliary inverters, motor drives and servo drives etc.

Electrical features

Low switching losses

Tvj op = 150° C

VCEsat with positive temperature coefficient

Low VCEsat

Mechanical features

High power and thermal cycling capability

Integrated NTC temperature sensor

Copper base plate

Pressfit contact technology

Standard housing

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