Infineon FP15R12W1T4BOMA1 IGBT Module, 28 A 1200 V
- RS stock no.:
- 244-5385
- Mfr. Part No.:
- FP15R12W1T4BOMA1
- Manufacturer:
- Infineon
Bulk discount available
Subtotal (1 tray of 24 units)*
R 18 294,432
(exc. VAT)
R 21 038,592
(inc. VAT)
FREE delivery for orders over R 1,500.00
In Stock
- 24 unit(s) ready to ship from another location
Need more? Click ‘Check delivery dates’ to find extra stock and lead times.
Units | Per unit | Per Tray* |
|---|---|---|
| 24 - 24 | R 762.268 | R 18,294.43 |
| 48 - 48 | R 743.212 | R 17,837.09 |
| 72 + | R 720.915 | R 17,301.96 |
*price indicative
- RS stock no.:
- 244-5385
- Mfr. Part No.:
- FP15R12W1T4BOMA1
- Manufacturer:
- Infineon
Specification
Technical data sheets
Legislation and Compliance
Product Details
Find similar products by selecting one or more attributes.
Select all | Attribute | Value |
|---|---|---|
| Brand | Infineon | |
| Maximum Continuous Collector Current | 28 A | |
| Maximum Collector Emitter Voltage | 1200 V | |
| Maximum Gate Emitter Voltage | +/-20V | |
| Maximum Power Dissipation | 130 W | |
| Number of Transistors | 7 | |
| Select all | ||
|---|---|---|
Brand Infineon | ||
Maximum Continuous Collector Current 28 A | ||
Maximum Collector Emitter Voltage 1200 V | ||
Maximum Gate Emitter Voltage +/-20V | ||
Maximum Power Dissipation 130 W | ||
Number of Transistors 7 | ||
The infineon IGBT module is suitable for auxiliary inverters, motor drives and air conditioning etc.
Electrical features
Low switching losses, low inductive design
Trench IGBT 3
VCEsat with positive temperature coefficient
Low VCEsat
Mechanical features
Al2O3 substrate with low thermal resistance
Compact design
Solder contact technology
Rugged mounting due to integrated mounting clamps
Low switching losses, low inductive design
Trench IGBT 3
VCEsat with positive temperature coefficient
Low VCEsat
Mechanical features
Al2O3 substrate with low thermal resistance
Compact design
Solder contact technology
Rugged mounting due to integrated mounting clamps
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