Infineon IGBT Module 1200 V

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Bulk discount available

Subtotal (1 tray of 24 units)*

R 17 528,808

(exc. VAT)

R 20 158,128

(inc. VAT)

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  • 24 unit(s) ready to ship from another location
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Units
Per unit
Per Tray*
24 - 24R 730.367R 17,528.81
48 - 48R 712.108R 17,090.59
72 +R 690.744R 16,577.86

*price indicative

RS stock no.:
244-5385
Mfr. Part No.:
FP15R12W1T4BOMA1
Manufacturer:
Infineon
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Brand

Infineon

Product Type

IGBT Module

Maximum Collector Emitter Voltage Vceo

1200V

Maximum Power Dissipation Pd

130W

Number of Transistors

7

Maximum Gate Emitter Voltage VGEO

20 V

Maximum Collector Emitter Saturation Voltage VceSAT

2.25V

Minimum Operating Temperature

-40°C

Maximum Operating Temperature

150°C

Length

62.8mm

Standards/Approvals

RoHS

Series

FP15R12W1T4B

Width

33.8 mm

Height

12mm

Automotive Standard

No

The infineon IGBT module is suitable for auxiliary inverters, motor drives and air conditioning etc.

Electrical features

Low switching losses, low inductive design

Trench IGBT 3

VCEsat with positive temperature coefficient

Low VCEsat

Mechanical features

Al2O3 substrate with low thermal resistance

Compact design

Solder contact technology

Rugged mounting due to integrated mounting clamps

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