Infineon IGBT Module 1200 V
- RS stock no.:
- 244-5383
- Mfr. Part No.:
- FP10R12W1T4BOMA1
- Manufacturer:
- Infineon
Image representative of range
Bulk discount available
View bulk pricing optionsSubtotal (1 tray of 24 units)*
R 10 901,832
(exc. VAT)
R 12 537,096
(inc. VAT)
FREE delivery for orders over R 1,500.00
Temporarily out of stock
- Shipping from 07 December 2026
Need more? Click ‘Check delivery dates’ to find extra stock and lead times.
Units | Per unit | Per Tray* |
|---|---|---|
| 24 - 24 | R 454.243 | R 10,901.83 |
| 48 - 48 | R 442.887 | R 10,629.29 |
| 72 + | R 429.60 | R 10,310.40 |
*price indicative
- RS stock no.:
- 244-5383
- Mfr. Part No.:
- FP10R12W1T4BOMA1
- Manufacturer:
- Infineon
Specification
Technical data sheets
Legislation and Compliance
Product Details
Find similar products by selecting one or more attributes.
Select all | Attribute | Value |
|---|---|---|
| Brand | Infineon | |
| Product Type | IGBT Module | |
| Maximum Collector Emitter Voltage Vceo | 1200V | |
| Number of Transistors | 7 | |
| Maximum Power Dissipation Pd | 105W | |
| Maximum Gate Emitter Voltage VGEO | 20 V | |
| Maximum Collector Emitter Saturation Voltage VceSAT | 2.25V | |
| Minimum Operating Temperature | -40°C | |
| Maximum Operating Temperature | 150°C | |
| Length | 62.8mm | |
| Height | 12mm | |
| Standards/Approvals | RoHS | |
| Series | FP10R12W1T4B | |
| Automotive Standard | No | |
| Select all | ||
|---|---|---|
Brand Infineon | ||
Product Type IGBT Module | ||
Maximum Collector Emitter Voltage Vceo 1200V | ||
Number of Transistors 7 | ||
Maximum Power Dissipation Pd 105W | ||
Maximum Gate Emitter Voltage VGEO 20 V | ||
Maximum Collector Emitter Saturation Voltage VceSAT 2.25V | ||
Minimum Operating Temperature -40°C | ||
Maximum Operating Temperature 150°C | ||
Length 62.8mm | ||
Height 12mm | ||
Standards/Approvals RoHS | ||
Series FP10R12W1T4B | ||
Automotive Standard No | ||
The infineon IGBT module is suitable for auxiliary inverters, motor drives and air conditioning etc.
Electrical features
Low switching losses
Trench IGBT 3
VCEsat with positive temperature coefficient
Low VCEsat
Mechanical features
Al2O3 substrate with low thermal resistance
Compact design
Solder contact technology
Rugged mounting due to integrated mounting clamps
Related links
- Infineon IGBT Module 1200 V
- Infineon FP10R12W1T4BOMA1 IGBT Module 1200 V
- Infineon IGBT Module 1200 V EconoPIM
- Infineon IGBT Module, 150 A 1200 V
- Infineon IGBT Module, 900 A 1200 V
- Infineon IGBT Module, 200 A 1200 V EconoPACKTM3
- Infineon FP15R12W1T4BOMA1 IGBT Module 1200 V
- Infineon FP25R12W2T4BOMA1 IGBT Module 1200 V