Infineon IGBT Module 1200 V

Image representative of range

Bulk discount available

Subtotal (1 tray of 10 units)*

R 32 634,41

(exc. VAT)

R 37 529,57

(inc. VAT)

Add to Basket
Select or type quantity
Temporarily out of stock
  • 10 unit(s) shipping from 16 April 2026
Need more? Click ‘Check delivery dates’ to find extra stock and lead times.
Units
Per unit
Per Tray*
10 - 10R 3,263.441R 32,634.41
20 - 20R 3,181.855R 31,818.55
30 +R 3,086.399R 30,863.99

*price indicative

RS stock no.:
244-5374
Mfr. Part No.:
FP100R12KT4B11BOSA1
Manufacturer:
Infineon
Find similar products by selecting one or more attributes.
Select all

Brand

Infineon

Product Type

IGBT Module

Maximum Collector Emitter Voltage Vceo

1200V

Maximum Power Dissipation Pd

515W

Number of Transistors

7

Minimum Operating Temperature

-40°C

Maximum Gate Emitter Voltage VGEO

20 V

Maximum Collector Emitter Saturation Voltage VceSAT

2.1V

Maximum Operating Temperature

150°C

Height

17mm

Length

122mm

Series

FP100R12KT4B11

Standards/Approvals

RoHS

Width

62 mm

Automotive Standard

No

COO (Country of Origin):
HU
The infineon IGBT module is suitable for auxiliary inverters, motor drives and servo drives etc.

Electrical features

Low switching losses

Tvj op = 150° C

VCEsat with positive temperature coefficient

Low VCEsat

Mechanical features

High power and thermal cycling capability

Integrated NTC temperature sensor

Copper base plate

Pressfit contact technology

Standard housing

Related links