Infineon IGBT Module 1200 V

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Bulk discount available

Subtotal (1 tray of 10 units)*

R 21 726,57

(exc. VAT)

R 24 985,56

(inc. VAT)

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Temporarily out of stock
  • 10 unit(s) shipping from 16 April 2026
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Units
Per unit
Per Tray*
10 - 10R 2,172.657R 21,726.57
20 - 20R 2,118.341R 21,183.41
30 +R 2,054.791R 20,547.91

*price indicative

RS stock no.:
244-5374
Mfr. Part No.:
FP100R12KT4B11BOSA1
Manufacturer:
Infineon
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Brand

Infineon

Product Type

IGBT Module

Maximum Collector Emitter Voltage Vceo

1200V

Number of Transistors

7

Maximum Power Dissipation Pd

515W

Minimum Operating Temperature

-40°C

Maximum Collector Emitter Saturation Voltage VceSAT

2.1V

Maximum Gate Emitter Voltage VGEO

20 V

Maximum Operating Temperature

150°C

Standards/Approvals

RoHS

Height

17mm

Width

62 mm

Series

FP100R12KT4B11

Length

122mm

Automotive Standard

No

COO (Country of Origin):
HU
The infineon IGBT module is suitable for auxiliary inverters, motor drives and servo drives etc.

Electrical features

Low switching losses

Tvj op = 150° C

VCEsat with positive temperature coefficient

Low VCEsat

Mechanical features

High power and thermal cycling capability

Integrated NTC temperature sensor

Copper base plate

Pressfit contact technology

Standard housing

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